β-Ga₂O₃, with ultra-wide bandgap, high absorption coefficient for high-energy ultraviolet (UV) photons, and high structural stability toward harsh-environment, has been receiving persistent attention for deep ultraviolet photodetectors applications. However, realization of devices with high tolerance toward high temperature faces great challenges due to considerable background signals mainly arising from abundant thermal excited carrier. Herein, nanowire-mediated high-quality β-Ga₂O₃ nanobelts with ultra-thin thickness and length up to several hundred micrometers were achieved via a simple catalyst-free chemical vapor deposition route. The resulted microdevice output superior optoelectric figure of merits among numerous reports about β-Ga₂O₃, i.e., ultra-low dark current (below the detection limit of 10⁻¹² A), high responsivity (1,320 A/W), and high spectral selectivity working under low voltage (~ 2 V). More importantly, the performance remains robust at elevated temperature higher than 573 K. These results indicate a large prospect for low-voltage driven deep ultraviolet photodetectors with good sensitivity and stability at harsh environments.

In recent years, transparent and flexible materials have been widely pursued in electronics and optoelectronics fields for usage as planar electrodes, energy conversion components and sensing units. As the most widely applied semiconductor material, the related progress in silicon is of great significance although with large difficulty. Herein, we report a one-step method to achieve flexible and transparent silicon nanowires aerogel membrane. A competitive carrier kinetics involving interfacial trapped carriers and the valence electrons transition is demonstrated, according to the photoelectric performance of a sandwiched graphene/silicon nanowires membrane/Al device, i.e., rapidly positive photoresponse dominated by laser excited free-carriers generation (~ 500 ms) and subsequent slow negative photocurrent evolution due to laser heating involved multi-levels process (> 10 s). These results contribute to fabrication of silicon nanowire self-assembly structures and also the exploration of their optoelectrical properties in flexible and transparent devices.