Two-dimensional MoS₂ photoelectric sensing array has shown great application potential in the image sensing field, and the fabrication of the pattern structure is the foundation for the construction of MoS₂ array devices. However, the traditional ion etching patterning technology easily leads to the shedding and residue of MoS₂ materials, which affects the quality of the pattern structure and the performance of the devices. Here, through a simple laser direct patterning method, we investigate the etching-free fabrication of the two-dimensional MoS₂ pattern structure and the construction of the photoelectric sensing array. The research results show that for monolayer MoS₂ materials, the removal rate of the laser direct patterning method can reach about 98%, the structural density of the fabricated array pattern can reach 107 units/mm², and the size of each pattern unit is about 3.5μm. Moreover, this fabrication method rarely introduces ion trap defects, and the photoelectric response of the MoS₂ sensing array has no obvious trailing effect. This work provides a reference for high-quality patterning of two-dimensional materials into array devices without etching.