Most of phosphors undergo thermal quenching (TQ) at high temperature, due to thermal-activated non-radiative transitions. TQ effects lead to significant reduced luminous efficiency of phosphors at high operation temperature, hindering their application in high power phosphor-converted white light-emitting diodes (WLED). Here, we report a zero-dimensional metal halide perovskite: Cs₂ZrCl₆:Sb³⁺, exhibiting robust anti-TQ red emission up to 500 K, comparable to the mainstream anti-TQ phosphors (e.g. K₂SiF₆:Mn⁴⁺). The hetero-valent doping of Sb³⁺ induces structure defects of host and thus compensate the non-radiative emission loss through thermal accelerated energy transfer from defects to emitter at high temperature. We assembled the red anti-TQ phosphor into a white light-emitting diode (WLED) device, achieving stable output light intensity and chromaticity up to 2000 mA.

Herein, we fabricate a well-patterned semiconductor ripple structure via confined Couette flow of a quantum dot solution between two glass slides. This method is broadly applicable to diverse colloidal quantum dots, including environmentally friendly CuIn_xGa_1−xS₂, InP, and ZnSe nanocrystals. The resulting ripple structure demonstrates strong linear dichroism and polarization capabilities for lasers across a broad wavelength range (445–635 nm). Our work offers a convenient, solution-processable strategy for fabricating semiconductor-based polarizer films.