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Most of phosphors undergo thermal quenching (TQ) at high temperature, due to thermal-activated non-radiative transitions. TQ effects lead to significant reduced luminous efficiency of phosphors at high operation temperature, hindering their application in high power phosphor-converted white light-emitting diodes (WLED). Here, we report a zero-dimensional metal halide perovskite: Cs2ZrCl6:Sb3+, exhibiting robust anti-TQ red emission up to 500 K, comparable to the mainstream anti-TQ phosphors (e.g. K2SiF6:Mn4+). The hetero-valent doping of Sb3+ induces structure defects of host and thus compensate the non-radiative emission loss through thermal accelerated energy transfer from defects to emitter at high temperature. We assembled the red anti-TQ phosphor into a white light-emitting diode (WLED) device, achieving stable output light intensity and chromaticity up to 2000 mA.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).
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