In the era of rapid development of digital communication, the secure transmission of data is becoming increasingly important. This study proposes a novel optical encryption method utilizing multidimensional field control in a MoS₂/WSe₂ heterojunction integrated with a ferroelectric Pb(Zr,Ti)O₃ (PZT) layer. Benefiting from the spontaneous polarization of the PZT layer, free charges in the heterojunction are redistributed, making excitonic states in the WSe₂ highly adjustable. By dynamically controlling excitonic states through a multidimensional field involving laser power, lateral bias, and vertical bias, we achieve precise modulation of the energy levels and intensity ratio of neutral exciton and trion in WSe₂ via photoluminescence measurements. This multidimensional field-programmable method provides a new route for optical encoding and encrypted information transmission, overcoming the limitations of conventional single or dual field modulation systems. Our work highlights the potential of multidimensional field exciton modulation in energy-efficient and reconfigurable optical encryption systems, with broad applications in secure communication.

The realization of controllable polarity photoresponse within a single device is a crucial advancement for simulating biological bipolar vision cells to drive the development of next-generation optoelectronic technologies. Nevertheless, current polarity photodetectors face significant challenges in fully suppressing symmetric photocurrent cancellation and optimizing carrier transport efficiency. Here, we propose a graphene-intercalated MoS₂/MoTe₂ heterojunction, featuring a tailorable built-in electric field and a high efficiency transport channel. Spatially resolved photocurrent reveals that the controllable polarity photoresponse originates from the bias-dependent equivalent built-in electric field of MoS₂/MLG/MoTe₂ heterojunction. The controllable polarity photoresponse realizes a large-area uniform “heart-shaped” photocurrent region. In enhanced polarity photoresponse mode, the photodetector exhibits broadband detection capabilities from visible (638 nm) to infrared (1550 nm) light, achieving a high responsivity of 18.1 A/W and an excellent detectivity of 2.8 × 10¹² Jones, as well as fast response times of 94/119 µs. Furthermore, precise imaging with a resolution better than 0.5 mm was successfully demonstrated, highlighting its polarity photoresponse for practical imaging applications. This work provides a new paradigm for controllable polarity photoresponse programmed by intercalated low-dimensional material structures, paving the way for next-generation intelligent sensing chips.