Quantum dot light-emitting diodes (QLEDs) have emerged as a leading platform for next-generation display technologies, gaining substantial research attention in recent years. Among various patterning strategies, direct photolithography offers distinct advantages through its high resolution, throughput, and process simplicity. However, current direct photolithography approaches face critical limitations in resolution and device performance, primarily arising from surface defect generation and photodamage of quantum dots (QDs) caused by deep-ultraviolet exposure and photochemical byproducts. To overcome these challenges, we present a novel benzophenone-derived photosensitive crosslinker featuring a byproduct-free C–H insertion mechanism with native ligands of QDs. Through precise structure design, the photo-absorption of the crosslinker extends to 365 nm, allowing the long-awaited QD patterning under standard i-line photolithography conditions. The developed crosslinker achieves unprecedented patterning resolution (pixel size ≈ 500 nm) with preserved photoluminescent characteristics. Corresponding QLED devices demonstrate remarkable performance enhancements, including a maximum external quantum efficiency (EQE) of 16.48% and a T₉₅ operational lifetime of 2258.3 h (approximately 2.1 times longer than pristine devices). These advancements establish a promising pathway toward high-resolution and high-performance QLEDs, thereby accelerating the commercialization of high-end optoelectronic devices.

Stability under light is critical for lead sulfide quantum dots (PbS QDs) in solar cell applications. To improve the stability of PbS QDs solar cells, the influence of the light illumination on the performance of the as-prepared PbS QDs solar cells was carefully investigated. Combined with X-ray and ultraviolet photoelectron spectroscopies, it was revealed that the 1,2-ethanedithiol (EDT) ligands of the hole transport p-type PbS QDs reacted with the ligands of the PbS QDs active layer under light illumination. The reaction not only undermines the n-type characteristics of the active layer, but also increases the number of defects, leading to a serious deterioration in device performance. An interface layer was introduced to block the EDT penetration to avoid this issue, significantly improving the stability of the device under light irradiation. Moreover, the separation of carriers was also enhanced due to the better matching the energy level of the interface layer. The device with an interface layer yielded a power conversion efficiency of 12.55% and sustained to a long time light illumination.