The experimental teaching of semiconductor physics, an important practical link in majors such as microelectronics and optoelectronic information, directly affects the students’ understanding of the physical essence of semiconductor devices and the cultivation of innovative abilities. Recently, with the rapid development of cutting-edge fields such as third-generation semiconductors and quantum devices, the inconsistency between traditional experimental teaching models and industry demand has become increasingly prominent. The current semiconductor physics experiment teaching mostly adopts the principle-verification single-point experiment mode. This approach lacks a systematic correlation between various experimental projects. This makes it difficult for students to construct a systematic cognitive framework of “material properties interface behavior device functionality,” which is significantly different from the emphasis on cultivating “systematic thinking” in engineering education certification.

To effectively solve the problem of poor connection between various knowledge modules and overcome students’ difficulty in building systematic cognition in semiconductor physics teaching, the School of Integrated Circuits at Huazhong University of Science and Technology systematically reconstructed the semiconductor physics curriculum and experiments with the core teaching philosophy of “crossing potential barriers.” Through carefully designed experimental teaching content updates and thematic connections, we focused on bridging the knowledge gap and established a modular experimental reform plan using thin-film solar cells as a carrier. This design breaks through the traditional linear structure of experiments and integrates eight key experiments into a knowledge loop through a four-dimensional advanced module of “semiconductor characteristics interface engineering device physics innovation expansion.” We innovatively adopted the “4-for-1+collaborative learning” model based on constructivist learning theory. This model not only resolves the contradiction between class hour limitations and knowledge breadth but also incorporates cutting-edge technologies such as AI data analysis and Raspberry Pi intelligent development to enhance teaching challenges.

The core of the innovative experimental system is in the construction of a closed-loop ability cultivation chain. The semiconductor basic module realizes a coupling analysis of PL spectroscopy and conductivity experiments, allowing students to independently establish a quantitative relationship between carrier concentration, mobility, and film quality. In the device research stage, the volt–ampere characteristic curve of solar cells is correlated and modeled with the previous material parameters, such as the interface defect density inferred by fitting the series resistance. This continuous design concretizes theoretical knowledge into actionable engineering indicators. The innovation challenge module introduces real scientific research scenarios that enable students to apply their ability to use open-source hardware to build testing systems and develop AI analysis algorithms.

(1) Integration of the knowledge system: Using thin-film solar cells as a carrier, knowledge of semiconductor physics was organically integrated through a four-dimensional module design (material properties interface engineering device research innovation challenges). The data-sharing mechanism enables students to master the key knowledge points of eight experiments while completing four, thus doubling the teaching capacity. (2) Cutting-edge technology integration: The introduction of TRPL, AI data analysis (such as convolutional neural network processing of photoconductive attenuation curves), and Raspberry Pi intelligent hardware enables breaking through the technical limitations of traditional silicon-based experiments. (3) Advanced ability cultivation: Through the design of “basic challenge” gradient tasks, students are transformed from passive operators to active creators, helping them achieve breakthroughs in their own technology transfer abilities. (4) Efficient resource construction: Dynamic update mechanisms (such as the rapid introduction of research on perovskite/organic stacked devices) ensure the synchronization of experimental content with cutting-edge technological achievements in the semiconductor field.

Refrigeration technology is widely used in military, commercial, industrial, and civilian fields. However, the existing mechanical compression refrigeration technology faces limitations such as large volume, high energy consumption, low cooling efficiency, and environmental unfriendliness, making it unable to meet the growing demands of emerging technological fields. The electrocaloric effect (ECE), which refers to the alignment of dipoles in polar materials under an electric field, leading to changes in entropy (ΔS) and temperature (ΔT), offers a promising alternative. Solid-state electrocaloric coolers based on the ECE are directly driven by electrical energy, which can achieve heat transfer and cooling. They exhibit some advantages such as high energy efficiency, ease of miniaturization and integration, and environmental friendliness, making them a highly potential and efficient refrigeration technology. Barium titanate (BaTiO₃)-based ceramics have attracted extensive research attention in the electrocaloric field due to their excellent polarization strength and rich phase structures. However, some challenges such as low breakdown electric fields, high sintering temperatures, and the inability to simultaneously optimize working temperature ranges and polarization strength hinder their practical applications. To address these issues, this work was to incorporate sintering additives CuO/Li₂CO₃ into lead-free Ba_0.97Ca_0.03Sn_0.1Ti_0.9O₃ ceramics to promote dense grain growth and optimize the breakdown electric field. The dielectric constant was improved, while maintaining the broad temperature range and continuous phase transition characteristics of BCST ceramics, ultimately achieving a large electrocaloric temperature change of 3.37 K (@55 ℃, 160 kV·cm^-1).

Ba_0.97Ca_0.03Sn_0.1Ti_0.9O₃ powder was synthesized by a conventional solid-state reaction sintering method at 1200 ℃ with BaCO₃, CaCO₃, SnO₂, and TiO₂ as raw materials in a stoichiometric ratio. The ceramic powder was then pressed into disks with the dimensions of ϕ13 mm×1 mm and sintered at 1350–1500 ℃ for 3 h to obtain dense ceramic samples. After sintering, the ceramic samples were polished, and gold electrodes were sputtered onto their surfaces. The polarization-electric field hysteresis loops (P−E loop) at room temperature were recorded by a model FETS-2000 ferroelectric tester (Wuhan Yanhe Technology Co., Ltd., China) under a frequency of 10 Hz. The values of ΔT were tested through a model RdF P/N 27134-3 heat flux sensor. The dielectric properties were obtained by a model PK-CPT1705 test system (PolyK Technologies Co., USA) with a testing temperature range from 25 to 150 ℃ and a frequency range from 100 Hz to 100 kHz. The microstructure of the grain was determined by a model GeminiSEM 300 scanning electron microscope (SEM) (Zeiss Co., Germany) and a model 7000 S/L X-ray diffractometer (XRD) (Shimadzu Corp., Japan).

The XRD patterns reveal that all ceramic samples exhibit a pure perovskite structure, indicating that Cu²⁺ and Li⁺ ions diffuse into the BCST lattice to form a solid solution. The addition of CuO/Li₂CO₃ causes the XRD diffraction peaks shifting to lower angles, indicating that Li⁺(the radius of 0.73 Å) and Cu²⁺(0.71 Å) substitute the B-site Ti⁴⁺(0.61 Å) and Sn⁴⁺(0.71 Å), leading to a lattice expansion. The SEM images demonstrate that the incorporation of CuO/Li₂CO₃ results in significant grain growth and well-developed, highly dense microstructures in the ceramic samples. The grain size increases from 7 μm to 46 μm due to the low melting points of CuO/Li₂CO₃, which induces liquid-phase sintering effects during the early stages of the sintering process, thus promoting mass transfer and facilitating grain growth and ceramic densification. Dielectric temperature spectra indicate that the addition of CuO/Li₂CO₃ significantly enhances the dielectric constant of BCST ceramics. This improvement can be attributed to two factors, i.e., the increase in grain size; second, the aliovalent acceptor doping of Cu²⁺ and Li⁺ substituting Ti⁴⁺ and Sn⁴⁺, which generates lattice defects and oxygen vacancies V_O^... These defects coupled to form dipole clusters, thereby enhancing the dielectric constant. Also, the local random electric fields caused by the charge mismatch between Cu²⁺/Li⁺ and Ti⁴⁺/Sn⁴⁺, as well as the average ionic size effect, due to the reduction in the phase transition temperature. Polarization–electric field (P–E) loops show a significant increase in the polarization strength of the ceramic samples with the addition of CuO/Li₂CO₃, which can also be attributed to the role of dipole clusters. The electrocaloric performance of the material is greatly enhanced, with the BCST-CL ceramic achieving a giant electrocaloric temperature change of ΔT = 3.37 K (i.e., at 55 ℃, E = 160 kV·cm^–1).

The Ba_0.97Ca_0.03Sn_0.1Ti_0.9O₃ (BCST) ceramic samples with varying amounts of CuO/Li₂CO₃ sintering additives exhibited a single perovskite structure, characterized by large, well-developed grains and a dense microstructure. The addition of CuO/Li₂CO₃ sintering agents enhanced the dielectric constant of the material, while preserving the broad continuous phase transition temperature range of BCST. During the sintering process, Cu²⁺ and Li⁺ ions entered the grains, leading to lattice expansion and increased ferroelectric displacement. Also, as acceptor dopants, they formed defect dipole clusters with oxygen vacancies, thereby improving the material's polarization strength. The direct measurement tests demonstrated a significant enhancement in the electrocaloric temperature change (ΔT) of the ceramic samples, while maintaining excellent operational stability. The BCST-CL composition achieved a maximum ΔT of 3.37 K (at 55 ℃, 160 kV·cm^–1), providing a feasible strategy for further improving the performance of electrocaloric ceramic materials.

Pyroelectric materials are widely used in the field of infrared detection. With the development of miniaturization and integration of devices, it is particularly important to develop lead-free pyroelectric sensitive elements with superior pyroelectric properties and high depolarization temperature compatible with reflow soldering process. In this paper, different mass fractions of Mn ions were doped into 0.96NaNbO₃–0.04BaTiO₃ matrix materials via a component gradient design. The effect of doping amount on the microstructure, ferroelectric properties, dielectric and pyroelectric properties of 0.96NaNbO₃–0.04BaTiO₃ ceramics was systematically investigated. The results show that when the doping amount of Mn is 0.4%, the ceramics have the optimum pyroelectric properties, which has a practical prospect of uncooled infrared detection.

All the components of sodium niobate ceramics were prepared by a solid-phase sintering method. The series of components were weighed according to the stoichiometric ratio, and the raw materials with anhydrous ethanol were ground in a stirred bead mill with zirconia beads at 400 r/min for 6 h. After being dried and shaped, the ground material was was pre-sintered at 1000 ℃ for 4 h, and then subjected to milling and drying. Green wafers with a diameter of 12 mm were prepared by pressure cold isostatic pressing at 200 MPa for 5 min after adding 10% PVA. The wafers were degummed at 600 ℃ for 2 h to remove organic matter and other impurities. To prevent the volatilization of sodium at a high temperature, the padding with the same composition was used for burial treatment, and the padding was kept at the corresponding temperature for 3 h and then cooled naturally. The sintered ceramic wafers were ground to fine particles with the size of 300 μm, coated with silver electrodes on both sides, and polarized in silicone oil under an electric field of 8–10 kV/mm at 80 ℃ for 15 min. The electrical properties were tested after 24 h.

The microstructural morphology, dielectric properties, temperature stability, and pyroelectric properties of 0.96NN–0.04BT ceramics doped with 0–0.6% Mn are investigated. The results show that doping Mn ions significantly improves the sintering characteristics of 0.96NN–0.04BT ceramics, enhances the density, and the relative densities of all components reach above 90%. The NN–BT ceramic grain size increases with the increase of the doping amount. The substitution position of Mn ions causes changes in the electrical properties of the ceramic as the Mn doping content increases gradually. The concentration of oxygen vacancies caused by Na⁺ evaporation decreases when Mn ions substitute for A-site vacancies, which is beneficial to reducing the ceramic dielectric constant and dielectric loss, thus significantly improving the detection sensitivity factor. However, as the Mn doping content further increases, the imbalance of charges is prone to attract oxygen vacancies to form defect dipoles due to the heterovalent substitution of Mn ions on the B-site, thereby producing domain wall pinning effects. Also, the defect dipoles cause the increasing coercive field of the doped material and make it difficult to fully polarize, resulting in the material that is unable to fully utilize its pyroelectric properties.

The ceramic could have more suitable characteristics for pyroelectric requirements via appropriately adjusting the Mn doping concentration. The ceramic with Mn ion doping mass fraction of 0.4% had the optimal pyroelectric performance (i.e., the pyroelectric coefficient of 2.11×10^–8 C·cm^–2·K^–1, and the F_v value of 3.74×10^–2 m²·C^–1), which was greater than 1.3 times and 1.8 times of the un-doped component. The coercive field reduced from 4.04 kV/mm of the un-doped component to 3.17 kV/mm, which was decreased by 21.5%. The results of the thermal stability test proved that the depolarization temperature could be maintained at 310 ℃, which had a practical prospect for non-cooled infrared detection.