We computationally investigate the impact of crystal strain on the formation of native point defects likely to be formed in halide perovskites; A-site cation antisite (I_A), Pb antisite (I_Pb), A-site cation vacany (V_A), I vacancy (V_I), Pb vacancy (V_Pb), and I interstitial (I_i). We systematically identify compressive and tensile strain to CsPbI₃, FAPbI₃, and MAPbI₃ perovskite structures. We observe that while each type of defect has a unique behaviour, overall, the defect formation in FAPbI₃ is much more sensitive to the strain. The compressive strain can enhance the formation energy of neutral I_Pb and I_i up to 15% for FAPbI₃, depending on the growth conditions. We show that the strain not only controls the formation of defects but also their transition levels in the band gap: A deep level can be transformed into a shallow level by the strain. We anticipate that tailoring the lattice strain can be used as a defect passivation mechanism for future studies.