Charge density wave, a periodic modulation of electronic charge density often accompanied by a periodic lattice distortion, plays a vital role to induce exotic phenomena in condensed matter physics. In non-magnetic quantum materials, contrast inversion in scanning tunneling microscopy images, observed between opposite bias polarity, serves as a hallmark of the charge density wave. However, in itinerant ferromagnetic systems, charge density wave formation competes with magnetism: A charge density wave order typically reduces the density of states at the Fermi level, while the Stoner criterion for spontaneous spin polarization requires a high density of states at Fermi level. Therefore, direct real-space observation of such polarity-dependent contrast inversion in ferromagnetic materials remains elusive and experimentally challenging. Here, we demonstrate the observation of a charge density wave in itinerant ferromagnet Fe5GeTe2 associated with
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Monolayer (1L) transition metal dichalcogenides (TMDCs) have been attracting tremendous interest in recent years as promising candidate materials in atomic-scale optoelectronic devices due to their direct band gaps (1.5–2.2 eV) and strong light–matter interactions. Unfortunately, their practical applications are limited by low visible light absorption stemming from atomic thickness and negligible infrared response. Here, we report the triangular Sb2O3 microresonators in wide thickness and lateral size distributions grown on 1L TMDCs and their created significant broadband enhancement of light adsorption and photoresponse in 1L WSe2 crystal via coexisting Fabry–Perot and whispering gallery type resonances. As an example of demonstration, 1L WSe2 crystal coupled to Sb2O3 microresonators with widely distributed sizes exhibits the enhanced visible light absorption by up to 5 folds and the simultaneously extended near infrared (NIR) one of more than 50%. For application of 1L WSe2 in photodetection, incorporation of Sb2O3 microresonators leads to significantly enhanced visible light responsivity by ~ 104 order and expanded NIR one of more than 400 mA·W−1. Similar results have been observed in the other 1L W(Mo) dichalcogenides coupled to Sb2O3 microresonators. This work provides a new route for development of the high-performance monolayer TMDCs-based optoelectronic devices.
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