A high-quality hybrid Cs_0.15FA_0.85PbI₃ thin film is deposited through doping of carbon nanodots (CNDs) into perovskite precursor solution. The corresponding inverted planar perovskite solar cells (PSCs) of ITO/PTAA/Cs_0.15FA_0.85PbI₃/PC₆₁BM/BCP/Ag exhibit an improvement in efficiency from 17.36% to 20.06%, which could be attributed to the passivation of the defects at the crystallized perovskite thin film and enhanced perovskite phase uniformity. The results of electron trap density indicate that the addition of CNDs significantly reduces the defects density at the perovskite thin film and the recombination of charge carriers in transport process is minimized. These results demonstrate that low-cost CNDs are effective additives for passivating defects, further reducing charge carrier recombination and improving device efficiency.