In-sensor processing enabled by monolithic dual-mode a-GaO_x/Hf_0.5Zr_0.5O₂ heterojunction for visual self-adaptation and anti-interference functionality

The development of high-order neuromorphic computing requires device that integrates in-sensor visual sensing-memory-processing. However, integrated of volatile and non-volatile behavior, as well as reconfigurable architecture for antagonistic photoresponse—excitation and inhibition in single device under single-wavelength stimulus remains critical bottleneck in designing all-in-one neuromorphic visual system. Herein, an amorphous-GaO_x/Hf_0.5Zr_0.5O₂ (a-GaO_x/HZO) heterojunction device demonstrates dual-mode functionality switchover between sensing module (SM) and non-volatile module (NVM) by merely adjusting single-wavelength light intensity. The merit parameters of the SM are governed by switchable ferroelectric polarization, forming sufficient foundations for optoelectronic logic gates. The reconfigurable photoresponse—light intensity-dependent excitation and inhibition (i.e., Weber's Law) of the NVM endows the framework with visual self-adaptation, namely photopic and scotopic adaptation. Representative self-adaptation photosensitivity and adaptive index are strongly correlated with switchable ferroelectric polarization, thereby boosting responsiveness and self-adaptability. Leveraging the dual-mode switchover mechanism, the monolithic a-GaO_x/HZO heterojunction units integrated SM with NVM serve as sensing and computing building blocks for designing in-sensor processing: the SM with distinguishable photoresponse for pre-filtering of interference information and reconfigurable conductance of the NVM for performing anti-interference transmission of digits. This work provides a programmable framework for designing multimodal integrated neuromorphic vision chips and establishing brain-like sensory system for anti-interference communication.