The development of high-order neuromorphic computing requires device that integrates in-sensor visual sensing-memory-processing. However, integrated of volatile and non-volatile behavior, as well as reconfigurable architecture for antagonistic photoresponse—excitation and inhibition in single device under single-wavelength stimulus remains critical bottleneck in designing all-in-one neuromorphic visual system. Herein, an amorphous-GaO_x/Hf_0.5Zr_0.5O₂ (a-GaO_x/HZO) heterojunction device demonstrates dual-mode functionality switchover between sensing module (SM) and non-volatile module (NVM) by merely adjusting single-wavelength light intensity. The merit parameters of the SM are governed by switchable ferroelectric polarization, forming sufficient foundations for optoelectronic logic gates. The reconfigurable photoresponse—light intensity-dependent excitation and inhibition (i.e., Weber's Law) of the NVM endows the framework with visual self-adaptation, namely photopic and scotopic adaptation. Representative self-adaptation photosensitivity and adaptive index are strongly correlated with switchable ferroelectric polarization, thereby boosting responsiveness and self-adaptability. Leveraging the dual-mode switchover mechanism, the monolithic a-GaO_x/HZO heterojunction units integrated SM with NVM serve as sensing and computing building blocks for designing in-sensor processing: the SM with distinguishable photoresponse for pre-filtering of interference information and reconfigurable conductance of the NVM for performing anti-interference transmission of digits. This work provides a programmable framework for designing multimodal integrated neuromorphic vision chips and establishing brain-like sensory system for anti-interference communication.

The topography and electrical properties are two crucial characteristics that determine the roles and functionalities of materials. Conductive atomic force microscopy (CAFM) is widely recognized for its ability to independently measure the topography and conductivity. The increasing trend towards miniaturization in electrical devices and sensors has encouraged an urgent demand for enhancing the accuracy of CAFM characterization. However, when performing CAFM tests on Bi_0.5Na_0.5TiO₃ bulk ceramic, it is interesting to observe significant currents related to the topography. Why do insulators exhibit “conductivity” in CAFM testing? Herein, we thoroughly investigated the topography-dependent current during CAFM testing for the first time. Based on the linear dependence between the current and the first derivative of topography, the calibration method has been proposed to eliminate the topographic crosstalk. This method is evaluated on Bi_0.5Na_0.5TiO₃ bulk ceramic, one-dimensional (1D) ZnO nanowire, two-dimensional (2D) NbOI₂ flake, and biological lotus leaf. The corresponding results of negligible topography-interference current affirm the feasibility and universality of this calibration method. This work effectively addresses the challenge of topographic crosstalk in CAFM characterization, thereby preventing the erroneous estimation of the conductivity of any unknown sample.