Two dimensional magnetic materials have great potential for the application of spintronics and data storage, while antiferromagnetic materials are widely used in the field of optoelectronics. In this paper, the nanostructure of antiferromagnetic material CrTe₃ was prepared by chemicalvapor deposition and characterized by X-ray and Raman spectroscopy. At the most suitable temperature of 910 ℃, the samples with high density and uniform particles were deposited. Fano resonance phenomenon was found by infrared reflection spectrum. In the nanostructure of CrTe₃, the asymmetry linearity in the Fano resonance phenomenon is generated by the coupling between the discrete state with granulation and the continuous state on the flat surface. By testing samples with different morphologies and analyzing their Fano linearity, it is shown that the characteristic does not change with the change of morphology, indicating that the Fano resonance phenomenon is an intrinsic characteristic of CrTe₃ nanostructures.