Ferroelectric phototransistors have emerged as promising platforms for integrating sensing, memory, and computing toward artificial intelligence systems, however, their practical applications are hindered by limited photoresponse and insufficient device performance. Here, we report a high-performance CuInP₂S₆ (CIPS)/CdS_0.42Se_0.58 ferroelectric heterojunction transistor enabled by a dry-transfer strategy, which synergistically combines ferroelectric polarization modulation with band-engineered heterointerfaces. The device exhibits outstanding optoelectronic performance, including a high light-to-dark current ratio of 4.37×10⁵, a responsivity of 5.38×10³ A/W, an external quantum efficiency of 1.14×10⁶%, and a specific detectivity up to 3.67×10¹⁵ Jones, along with a fast response time of 78/320 μs. Importantly, polarization switching effectively tunes carrier transport by modulating the depletion region at the heterointerface, enabling controllable photoresponse characteristics. Leveraging these advantages, the device is further demonstrated for visible-light imaging and convolutional neural network (CNN)-assisted image recognition, achieving an accuracy of 96.09%. Compared with previously reported CIPS-based devices, this work realizes a substantial improvement in both sensitivity and speed. This study highlights the effectiveness of ferroelectric-semiconductor heterostructure engineering for high-performance photodetection and provides a viable pathway toward highly integrated and intelligent optoelectronic systems.

Layered Bi₂O₂Se nanosheets, characterized by a low bandgap, high electron mobility, and good air stability, have garnered significant attention for their potential applications in electronics and photonics. However, the relatively low photocurrent generated by single Bi₂O₂Se nanosheet photodetectors results in diminished switching ratios and responsiveness, thereby limiting the overall performance of Bi₂O₂Se-based photodetectors. In this study, we report a dual-band heterostructure photodetector constructed from high-quality Bi₂O₂Se nanosheets and CdS nanobelts. This device demonstrates exceptional photodetection performance in both the visible (450 nm) and near-infrared (1150 nm) regions, featuring a high switching ratio, increased responsivity, elevated specific detectivity, large external quantum efficiency, and rapid response speed. Notably, these key parameters exceed those reported in most Bi₂O₂Se-based photodetectors. Importantly, the Bi₂O₂Se/CdS heterostructure photodetector showcases impressive high-resolution imaging capabilities. These findings highlight the promising potential of this device for applications in image sensing and encrypted optical communication.