The photonic debonding process demonstrates significant potential for application in large-size wafer-level/panel-level advanced packaging owing to its advantages of high throughput, high precision, and ease of manipulation. However, conventional metal-based release materials still face the challenge of low photothermal conversion efficiency, which leads to the photonic debonding process not only requiring high-power equipment, but also suffering from time- and energy-consuming as well as safety concerns. Here, we propose a method to prepare laser-induced graphite films (LIGF) in situ on glass surfaces based on the spatial confinement effect. Thanks to the unique “flat bone” multiscale nanostructure, the absorption rate of LIGF is higher than 95% in a wide wavelength band of 200–1100 nm, which dramatically improves the photothermal conversion efficiency of the released material. Under pulsed flash irradiation, the LIGF-based release layer absorbs photon energy and generates a transient high temperature, which causes thermal decomposition of the organic adhesive material in contact with the release layer, enabling rapid separation at the interface of release layer and adhesive layer (R/A). Compared to metal-based release materials, LIGF is able to reduce the photonic debonding threshold of the same bonding pair by ~40%, and the R/A separation interface exhibits the advantages of no carbon debris and easy cleaning. It is noteworthy that the LIGF release layer remains virtually undamaged after photonic debonding and allowing multiple reuses. In addition, the ultra-low transmittance (≤0.02%) of the LIGF release layer prevents light leakage-induced damage to the device surface. The prepared LIGF release material demonstrates exceptional thermal and chemical resistance, ensuring robust industrial adaptability. These properties make it a promising candidate for large-scale wafer-/panel-level photonic debonding in advanced packaging applications.

Laser debonding technology has been widely used in advanced chip packaging, such as fan-out integration, 2.5D/3D ICs, and MEMS devices. Typically, laser debonding of bonded pairs (R/R separation) is typically achieved by completely removing the material from the ablation region within the release material layer at high energy densities. However, this R/R separation method often results in a significant amount of release material and carbonized debris remaining on the surface of the device wafer, severely reducing product yields and cleaning efficiency for ultra-thin device wafers. Here, we proposed an interfacial separation strategy based on laser-induced hot stamping effect and thermoelastic stress wave, which enables stress-free separation of wafer bonding pairs at the interface of the release layer and the adhesive layer (R/A separation). By comprehensively analyzing the micro-morphology and material composition of the release material, we elucidated the laser debonding behavior of bonded pairs under different separation modes. Additionally, we calculated the ablation threshold of the release material in the case of wafer bonding and established the processing window for different separation methods. This work offers a fresh perspective on the development and application of laser debonding technology. The proposed R/A interface separation method is versatile, controllable, and highly reliable, and does not leave release materials and carbonized debris on device wafers, demonstrating strong industrial adaptability, which greatly facilitates the application and development of advanced packaging for ultra-thin chips.