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Growth, Spectra, and Laser Performance of Er3+–Activated Gd3Ga5O12 and Lu3Ga5O12 Mid-Infrared Laser Crystals
Journal of the Chinese Ceramic Society 2025, 53(12): 3446-3460
Published: 16 October 2025
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Introduction

Mid-infrared (MIR) lasers operating within a spectral region of 2.7–3.0 μm have a significant importance in applications such as laser surgery and remote sensing. Trivalent erbium (Er3+) ions are among the most efficient activators for MIR lasers, leveraging the 4I11/24I13/2 transition. Nevertheless, the realization of high-power and efficient laser output is often hindered due to the self-terminating effect and substantial thermal loading in Er3+-doped gain medium. This study was to investigate the high-performance Er3+-doped Gd3Ga5O12 (GGG) and Lu3Ga5O12 (LuGG) laser crystals with the low phonon energy and high thermal conductivity.

Methods

High–quality single crystals of Er: GGG, Er/ Pr: GGG, and Er: LuGG were grown by the Czochralski method in an optimized atmosphere (i.e., 98% N2 + 2% O2) with iridium crucibles and (111)-oriented seeds. Raw materials underwent multi-step sintering to guarantee the phase purity. Comprehensive spectroscopic analysis was conducted on the polished samples. The room-temperature absorption spectra were determined by a model Lambda 900 spectrophotometer. The fluorescence spectra at the mid-infrared (MIR: 2500–3000 nm), near–infrared (NIR: 950–1750 nm) and upconversion (UC: 500–700 nm) bands were measured under 965/967 nm excitation by an optical parametric oscillator (OPO) or a xenon lamp using models FLS920 and FSP920 fluorescence spectrometers. The fluorescence decay curves for the 4I11/2 and 4I13/2 energy levels were recorded to determine the fluorescence lifetime. The laser performance was assessed under two pumping schemes (i.e., a xenon lamp and a 965 nm fiber-coupled laser diode (LD)). The crystals were fabricated into laser gain media of various sizes and doping profiles, including a bonded configuration (undoped GGG/ 56% Er: GGG) to alleviate thermal lensing. The continuous-wave (CW) performance was evaluated via input–output power curves, slope efficiency, laser threshold, and beam quality factor (M2). The passive Q-switching was implemented with two-dimensional materials (i.e., graphene and a Bi2Te3/graphene heterostructure) as saturable absorbers. The main pulsed laser metrics (i.e., pulse train profile, average output power, pulse width, repetition rate, and peak power) were systematically determined.

Results and Discussion

The as-grown crystals display a high optical quality with intense and broad absorption bands centered at 965 nm. The 30% Er, 0.5% Pr: GGG composition has a notably high absorption cross-section of 5.13×10–21 cm2 and a full width at half maximum (FWHM) of 15 nm, indicating a superior spectral overlap with commercial 980 nm InGaAs laser diodes and enabling efficient pump coupling. The incorporation of Pr3+ ions can enhance the MIR fluorescence emission based on a cross-relaxation energy transfer mechanism, i.e., 4I13/2 (Er3+) + 3H4 (Pr3+) → 4I15/2 (Er3+) + 3F4 (Pr3+). This process effectively depopulates the lower laser level (4I13/2), leading to a reversal of the intrinsic lifetime ratio between metastable states. Specifically, a ratio of τ(4I11/2)/τ(4I13/2) of 2.348 appears in the sample 30% Er, 0.5% Pr:GGG, which is critical for overcoming the self–termination barrier in Er3+ -based ~3 μm lasers.

Under 965 nm LD pumping, a CW laser emission at 2.75 μm is attained. The 56% Er: GGG crystal has a maximum output power of 325 mW with a slope efficiency of 16.15%. The bonded GGG/ 56% Er: GGG structure improves the thermal management, increasing the maximum power to 453 mW and the slope efficiency to 17.1%, while also improving beam quality (i.e., M2 reduces from 1.68 to 1.48). The Er/ Pr: GGG crystal (11% Er, 0.4% Pr) shows a superior thermal performance, reaching 372 mW output and a higher damage threshold, due to the lower Er3+ concentration and efficient energy transfer.

The passive Q-switching with graphene and Bi2Te3/graphene absorbers produce impressive pulsed outcomes. The graphene-based Q-switched bonded GGG/Er, Pr: GGG/GGG crystal has a maximum average power of 186 mW, a pulse width of 360 ns, and a repetition rate of 120.5 kHz, corresponding to a pulse energy of 1.54 μJ and a peak power exceeding 4.28 W. The Bi2Te3/graphene Q-switched Er: LuGG laser can deliver a higher average power of 274 mW with a shorter pulse width of 340 ns at 135 kHz, yielding a pulse energy of 2.03 μJ and a peak power of > 5.97 W. These findings affirm a potential of these materials in high-performance pulsed MIR lasers.

Conclusions

This work established Er3+-doped GGG and LuGG crystals as highly promising gain media for efficient ~2.75 μm mid-infrared lasers. The strategies of Pr3+ co-doping and crystal bonding proved effective in mitigating the self-terminating effect and thermal load, leading to the improvement of substantial performance. The effective operation in both continuous–wave and passively Q-switched regimes could underscore the applicability of these crystals in practical high-power MIR laser systems.

Open Access Review Issue
Review on research progress of crystalline materials with abnormal thermal properties
Materials and Solidification 2025, 1(2): 9580008
Published: 27 April 2025
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Thermodynamic features of crystalline materials are closely linked to their state of structure. It covers key aspects like energy states, stability, and phase transitions under different temperature and pressure conditions. Thermodynamic traits namely thermal conductivity, specific heat capacity, and thermal expansion coefficient are the main characteristics in evaluating the performance of materials, which can be widely used in the fields of optoelectronics, aerospace, precision instruments, and other devices, etc. This work explores the thermal properties of crystalline materials, specifically focusing on thermal conduction and thermal expansion. It delves into how these critical properties affect the design of materials, their various applications, and their significance in scientific research. At the same time, the types of mechanisms and influencing factors of high thermal conductivity and abnormal thermal expansion crystals are emphatically discussed. The main research progress reported up to now is introduced, the limitations of current high thermal conductivity, negative thermal expansion, and near-zero thermal expansion material systems are clarified, and future research direction is further prospected.

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