Flexible polymers have garnered significant interest in the field of flexoelectricity due to their capacity to endure substantial strain gradients. However, the flexoelectric coefficients of these polymers are generally lower than those of ferroelectric ceramics, thereby restricting their application potential in sensor technologies. In this study, we propose a method to augment the flexoelectric coefficients of polyvinylidene fluoride (PVDF) films through the incorporation of silver niobate (AgNbO₃) nanoparticles and nanofibers. Owing to the enhancement in dielectric constant resulting from the introduction of AgNbO₃, the flexoelectric coefficients of the PVDF composite films increased with the concentration of AgNbO₃ achieving a maximum value of 20.6 nC/m, which represents a 2.6-fold increase compared to pure PVDF. Based on this, a multilayer flexible sensor embedded with the PVDF composite films was designed for monitoring human joint motion. The measured flexoelectric current was found to increase with the finger bending angle, and the result was in good agreement with the theoretical prediction. This research provides an effective method for enhancing the flexoelectric response of flexible PVDF-based polymer films and offers novel insights into the development of wearable flexible electronic devices.

Motivated by advances in spintronic devices, extensive explorations are underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of an intrinsic skyrmion state in the van der Waals ferromagnet Fe₃GaTe₂. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe₃GaTe₂ flakes. The ordering of skyrmion state is further analyzed. Our results suggest Fe₃GaTe₂ emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices.