In order to solve a problem of Sn-loss and reduce the thickness of MoS₂ during the sulfurization process, the oxygen containing Cu-Zn-Sn precursor thin films were prepared on Mo-coated soda lime glasses via magnetron sputtering ZnO/SnO₂/Cu. The results show that the Sn-loss and the formation of MoS₂ are well inhibited by the utilization of SnO₂ and ZnO. The single-phase CZTS absorbed thin films with the smooth surface, dense grains and good crystal structure can be prepared at 590 ℃. Also, the CZTS solar cells from oxygen containing precursors annealed at 590 ℃ have an optimum power conversion efficiency (PCE) of 5.12% with an open circuit voltage of 590 mV, a short circuit current density of 22.09 mA/cm² and a fill factor of 39.28%.