With antireflection coating (ARC), the Fresnel reflection at the gas-solid interface can be reduced, which is one of the effective means to improve the performance conversion efficiency (PCE) of crystalline silicon solar cells. We proposed to use SiO _xN_y(1)/SiN_x(3) stacking layer as a front-side ARC to enhance the efficiency of incident photon in commercial bifacial PERC monocrystalline solar cells (182 mm×182 mm). Compared with the conventional SiN_x(4) ARC, the SiO_xN_y(1)/SiN_x(3) ARC is much stronger in suppressing the photon reflectivity over the range of 300–500 nm, especially in the shorter wavelength regime. The average PCE can be as high as 23.227% under standard test conditions (AM1.5, 1000 W·m⁻², 25 ℃), as compared with that of the conventional SiN _x(4) ARC based cells (23.128%). According to the QE spectrum integrated current loss analyzed with the SERIS-V1.5 software, the current loss of the SiO_xN_y(1)/SiN_x(3) ARC cells was reduced to 0.867 mA·cm⁻². Meanwhile, other parameters, such an open-circuit voltage and filling factor, can be also improved to a certain extent, while the rear-side PCE is not obviously affected. In addition, yield rate of the SiO_xN_y(1)/SiN_x(3) ARC cells that are checked with EL testing can match well with the conventional SiN _x(4) based cells, demonstrating the potential for large-scale production.

Electronic transport layer plays a crucial role as a key component in emerging thin-film solar cells for the transportation of photo-generated electrons. In this study, we employed a simple co-precipitation method to synthesize well-sized BaSnO₃ (referred to as BSO) ternary nanocrystals. The impact of annealing temperature on the formation of BSO was studied. X-ray diffraction (XRD) results indicate that elevated temperatures are beneficial for reducing impurities, such as barium carbonate in BSO, thereby enhancing the phase purity of BSO nanocrystals. The synthesized BSO nanocrystals were applied as electron transport layer in PbS colloidal quantum dot solar cells. Performance of the devices with BSO synthesized at 1200 ℃ for 2 h surpassed that of the commercial TiO₂ nanocrystal. This improvement is mainly attributed to the efficient extraction of charges at the BSO/PbS quantum dot interface and low recombination at internal interfaces within the device.The optimal device exhibited the following characteristics: J_sc=25.199 mA·cm^-2, V_oc=0.480 V, FF=0.534 and PCE=6.454%, demonstrating excellent operational stability. It is confirmed for the first time that BaSnO₃ nanomaterials can be utilized as electron transport materials for quantum dot solar cells, providing theoretical and practical guidance for further advancements in the performance of similar devices in the future.