Smart wearable market is burgeoning, and flexible energy storage is crucial to cope with its development. The commonly-used metal-based current collectors are heavy with limited flexibility. Other carbon-based current collectors are expensive and fragile. Moreover, the poor interface between active material and current collector leads to unsatisfactory stability. Herein, these two issues are attempted to be solved by using cheap and lightweight polyester-based fabrics as well as in-situ growth. A deposited thin layer of nickel on the fabrics not only enhances the conductivity, but also serves as the sacrificial precursor for the growth of active materials. Thus, intimate contact is secured via chemical bonding. The electrode with ternary (metal-inorganic-organic) component shows excellent electrochemical performance. Namely, high areal capacity is realized (2.2 C cm⁻² at 2 mA cm⁻²), which is far superior to its rigid nickel-foam-based counterpart. Furthermore, an all-solid-state supercapacitor device was assembled. The device provides an areal capacity of 2.03 C cm⁻² at the current density of 2 mA cm⁻². It realizes an energy density of 0.45 mWh cm⁻² when the power density is 1.6 mW cm⁻². This work offers a feasible and cost-efficient way for fabricating electrode materials with excellent performance for portable supercapacitors.

Single photocatalysts usually exhibit unsatisfactory performance due to the serious recombination of photogenerated electron‒hole pairs. Combining two photocatalysts to construct S-scheme heterojunction could solve this problem. In S-scheme mechanism, the interfacial built-in electric field (IEF) provides a vital driving force for efficient charge separation. Modifying the IEF is a feasible strategy to further improve the photocatalytic activity. Herein, a novel idea of tuning the strength of IEF in 2D/2D graphitic carbon nitride (g-C₃N₄)/MS₂ (M = Sn, Zr) S-scheme heterojunctions by nonmetal doping was developed by employing density functional theory calculation. Three nonmetal elements (O, P, and S) were severally introduced into g-C₃N₄/MS₂ composites. Charge density difference suggested that O and S doping led to increased interfacial electron transfer, while P doping had minimal influence. As expected, the calculated field strength of O- and S-doped g-C₃N₄/MS₂ composites was significantly larger than that of pristine and P-doped g-C₃N₄/MS₂ composites. Therefore, O and S doping endowed g-C₃N₄/MS₂ S-scheme heterojunctions with enhanced IEF and more thorough charge transfer. Correspondingly, the experimentally synthesized O-C₃N₄/SnS₂ composite exhibited better photocatalytic H₂-production activity than g-C₃N₄/SnS₂ composite. This work proposed an original idea of employing proper nonmetal doping to magnify the advantage of S-scheme heterojunction in accelerating charge separation.