This work presents a high-stability self-rectifying memristor (SRM) array based on the Pt/TaO_x/Ti structure, with an in-depth investigation of the performance and potential applications of the device. The device demonstrates excellent rectification and on/off ratios, along with low-power readout, multi-state storage, and multi-level switching capabilities, highlighting its practicality and adaptability. Notably, the device exhibits outstanding fluctuation suppression and exceptional uniformity. The coefficient of variation (CV) of the rectification ratio, calculated as 0.11497 at 3 V, indicates its high stability under multiple cycles and low-voltage operation, making it well-suited for large-scale integration and operational applications. Moreover, the stability of the rectification ratio further reinforces its potential as a hardware foundation for large-scale in-memory computing systems. By combining the neuromorphic characteristics of the device with a simulated annealing algorithm and optimizing the annealing temperature function, the system emulates biological neuron behavior, enabling fast and efficient image restoration tasks. Experimental results demonstrate that this approach significantly outperforms traditional algorithms in both optimization speed and repair accuracy. The present study offers a novel perspective for the design of in-memory computing hardware and showcases promising applications in neuromorphic computing and image processing.

Self-rectifying memristor (SRM) arrays hold tremendous potential in high-density data storage and energy-efficient neuromorphic computing. However, SRM arrays are mostly developed on rigid substrates and lack mechanical flexibility, limiting their applications in intelligent electronic skin, wearable technologies, etc. Here, we present a high-performance SRM array based on Pt/HfO₂/Ta₂O_5−x/Ti heterojunctions, which can be fabricated on a flexible polyimides (PI) substrate and demonstrates exceptional memristive performance under bending conditions (bending radius (R) = 1 cm, rectifying ratio > 10⁴, retention time > 10⁴ s and endurance > 10⁵ cycles). We demonstrate a 16 × 16 flexible memristor array offering noise filtering and data storage capabilities, which can be used to accurately process and store the signals transmitted by a pressure sensor array. This research represents an important advancement towards the realization of next-generation high-performance flexible electronics.