The p-n junction diode and field-effect transistor are foundational elements in modern electronics and optoelectronics. While high-performance field-effect devices have been realized using monolayered materials and their heterostructures, there has been a notable absence of p-n heterojunction diodes derived from inkjet-printed two-dimensional (2D) materials, which may lead to the development of complex electronic and optoelectronic circuits. This study addresses this gap by detailing the development and characterization of heterojunction p-n diodes fabricated through the inkjet printing of carbon nanotubes (CNTs) and molybdenum disulfide (MoS₂). The use of inkjet printing technology for both CNTs and MoS₂ allows for precise, scalable, and cost-effective fabrication. The resulting heterojunction diodes exhibit excellent diode behavior, with a rectification ratio exceeding 10³. Additionally, the diode shows significant photoconductive properties, with a rapid photoresponse time of approximately 2 µs. This swift photoresponse is essential for high-speed optoelectronic applications, making the diode a promising component in advanced electronic systems. The study underscores the potential of inkjet printing technology to revolutionize the production of sophisticated, low-cost electronic devices with superior performance metrics, particularly in terms of photoresponse efficiency and speed. The integration of CNTs and MoS₂ via inkjet printing not only streamlines the manufacturing process but also enhances the functional properties of the heterojunction diodes, positioning it as a viable candidate for future optoelectronic applications.