Colloidal indium phosphide (InP) quantum dots (QDs) have emerged as promising cadmium-free alternatives due to their tunable emission and compliance with environmental regulations. This study presents a strategy in synthesizing aminophosphine-based high-efficiency green-emissive InP QDs through precisely controlled in-situ etching and interfacial engineering. By employing ZnF₂ as an etchant during both nucleation and shelling stages, atomic-level defect passivation is achieved in magic-sized InP clusters while preserving crystallographic integrity. The synergistic integration of tri-n-octylphosphine ligands during nucleation and ZnSe interfacial layers in ZnSeS/ZnS shell growth effectively suppressed the occurrence of excessive etching, yielding green-emission QDs with exceptional photoluminescence quantum yield (93%) and narrow emission linewidth (36 nm). Advanced surface modification using carboxylic acid–thiol bifunctional ligands further enhanced charge transport properties. Prototype quantum dot light-emitting diodes fabricated from these optimized QDs demonstrated performance in InP-based devices, achieving the maximum external quantum efficiency of 4.6% and a peak maximum luminance exceeding 13,000 cd/m². The etching–optical properties–surface passivation interdependence in InP QDs was investigated by femtosecond transient absorption spectra. This work establishes a universal framework for balancing oxide removal efficiency and core dissolution in InP QDs. The developed approach offers practical solutions to long-standing challenges in controlling defects during InP QD synthesis.

For the new display technology based on quantum dots (QDs), realizing high-precision arrays of red, green, and blue (RGB) pixels has been a significant research focus at present, aimed at achieving high-quality and high-resolution image displays. However, challenges such as material stability and the variability of process environments complicate the assurance of quality in high-precision patterns. The novel optical patterning technology, exemplified by direct photolithography, is considered a highly promising approach for achieving submicron-level, hyperfine patterning. On the technological level, this method produces patterned quantum dot light-emitting films through a photochemical reaction. Here, we provide a comprehensive review of various methods of QD photolithography patterning, including traditional photolithography, lift off, and direct photolithography, which mainly focused on direct photolithography. This review covers the classification of direct photolithography technologies, summarizes the latest research progress, and discusses future perspectives on the advancement of photolithography technology de-masking.