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Re-Understanding Manganese Doping Mechanism of 0.365BiScO3–0.635PbTiO3 Piezoelectric Ceramics for High-Temperature Vibration Sensors
Journal of the Chinese Ceramic Society 2026, 54(4): 1190-1201
Published: 30 January 2026
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Introduction

High-temperature vibration sensors are indispensable key components for the health detection of core equipment in fields such as aerospace and nuclear energy. The BiScO3–PbTiO3(BS–PT) system has attracted much attention due to its high Curie temperature (TC≈450 ℃) and excellent piezoelectricity (d33≈450 pC/N). However, the poor insulation properties of this material hinder its application in high-temperature vibration sensors because high electrical resistivity (ρ) and a long time constant (τ) are critical to prevent thermal runaway and ensure signal integrity. Manganese (Mn) doping is a commonly used modification method for piezoelectric ceramics. Previous studies on Mn-doped BS–PT were controversial regarding the valence state distribution and substitution positions of Mn ions, which could not be conducive to the design of high-temperature piezoelectric ceramics with the collaborative optimization of multiple electrical parameters. Therefore, this work was to clarify the defect chemical mechanism associated with manganese doping through refined structural characterization combined with electrical performance analysis, and to obtain the modified BS–PT piezoelectric ceramic components suitable for high-temperature vibration sensors.

Methods

0.365BiScO3–0.635PbTiO3x% MnO2 (BSPT–x% MnO2, x=0.00, 0.01, 0.25, 0.50, 0.75, 1.00, 1.25, 1.50, 1.75, 2.00) ceramics were synthesized by a conventional solid-state reaction method. The powders were firstly calcined at 800 ℃ for 2 h and then sintered at 1050 ℃ for 2 h. The phase composition was analyzed by X-ray diffraction (XRD). The rietveld refinements were performed using a software named GSAS. The microstructure and elemental distribution were examined by scanning electron microscopy (SEM) equipped with energy-dispersive X-ray spectroscopy (EDS). The average grain size was estimated by a software named Nano Measurer. The Mn valence states were determined by X-ray photoelectron spectroscopy (XPS). For electrical measurements, poled samples (120 ℃, 5 kV/mm, 30 min) were used. The piezoelectric coefficient (d33) was measured by a model CAS ZJ-6A quasi-static meter. The electromechanical coupling coefficient (kp) was measured by a model Agilent 4294A impedance analyzer. The temperature-dependent dielectric properties were measured by a model Agilent E4980A LCR analyzer. The high-temperature DC resistivity (ρ) was measured by a model Keithley 6517B high-resistance electrometer. The in-situ d33 was measured by a model Julang TZFD-600 variable temperature quasi-static d33 measurement system.

Results and discussion

The Mn doping mechanism and high-temperature performance of BS-PT ceramics are systematically clarified. The XPS results confirm the coexistence of Mn2+ and Mn3+. To quantitatively verify the substitution site, the rietveld refinement reveals a non-monotonic evolution of unit cell volume. Based on the EDS evidence of Sc segregation without Ti precipitation, Mn ions preferentially substitute for B-site Sc3+. The dominant aliovalent substitution introduces defect dipoles accompanied with strong local random electric fields, significantly enhancing a relaxor behavior, while triggering a "hardening" effect that reduces tanδ and εr. The decoupling of piezoelectric and dielectric properties is achieved in specific compositions due to the grain boundary effect compensating for the hardening effect, especially obtaining the optimal piezoelectric voltage constant (g33) at the component with x of 1.00. For high-temperature capabilities, the optimal composition (x=1.00) demonstrates a superior stability, with in-situ d33 variation remaining within 20% up to 400 ℃. The thermally stable defect dipoles effectively trap oxygen vacancies, leading to a high resistivity of 109 Ω·cm and an enhanced time constant of 0.072 s at 350 ℃. Consequently, the ceramic with x of 1.00 exhibits a high g33 of 0.012 V·m/N when evaluated at a unified service temperature of 350 ℃, which is 50% higher than that of the undoped counterpart. These results indicate that the modified ceramic achieves an optimal balance of sensitivity and insulation for high-temperature vibration sensors.

Conclusions

This work clarified the Mn doping mechanism in BS-PT ceramics. The results of correlative XPS, Rietveld refinement, and EDS analysis confirmed that Mn ions could preferentially substitute for B-site Sc3+. The dominant aliovalent substitution induced a hardening effect, while the recovery of d33 was dominated by grain size restoration. The optimal composition (x=1.00) exhibited a robust stability with d33 variation within 20% at 400 ℃. The thermally stable defect dipoles could obtain a high resistivity (109 Ω·cm) and time constant (0.072 s) at 350 ℃. Meanwhile, a superior piezoelectric voltage coefficient (g33) of 0.012 V·m/N was achieved at 350 ℃, which was 50% higher than that of the undoped counterpart, validating its potential for high-temperature sensors.

Open Access Research Article Issue
Boosting ultra-wide temperature dielectric stability of multilayer ceramic capacitor through tailoring the combination types of polar nanoregions
Journal of Materiomics 2024, 10(4): 751-761
Published: 06 October 2023
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With the rapid development of space exploration and new energy vehicles, it is urgent to build ultra-wide temperature multilayer ceramic capacitors (UWT MLCCs) to match electronic circuits that can withstand harsh environmental conditions. Relaxor ferroelectrics with diffuse phase transition feature are potential dielectrics for the construction of UWT MLCCs. However, how to ensure high dielectric constant together with low dielectric loss in the wide temperature region is still a big challenge. Here, the above difficulties are addressed by tailoring the combination types of polar nanoregions (PNRs) in the (1-x) (0.8Na0.5Bi0.5TiO3-0.2K0.5Bi0.5TiO3)-xNaTaO3 (NBT-KBT-xNT) system. Compared with PNRs types of P4bm + R3c and P4bm + Pbnm, the combination type of P4bm + Pbnm + R3c PNRs in NBT-KBT-0.31NT is the most beneficial to obtain comprehensive excellent dielectric performance because it can balance the relationship between high dielectric constant and temperature stability over a wide temperature region. Further, by optimizing the laminating pressure and co-firing temperature to realize a tight interfacial structure between the dielectric layer and the Pt inner electrode, a record-high dielectric constant (εr = (907% ± 15%)) together with low dielectric loss (tanδ ≤ 0.025) is achieved over an ultra-wide range from −61 ℃ to 306 ℃ for NBT-KBT-0.31NT MLCC, demonstrating that tailoring the combination types of PNRs is a powerful strategy in designing UWT MLCC dielectrics.

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