Ferroelectric (FE) thin films have recently attracted renewed interest in research due to their great potential for designing novel tunable electromagnetic devices such as large intelligent surfaces (LISs). However, the mechanism of how a polar structure in the FE thin films contributes to desired tunable performance, especially within the microwave frequency range, which is the most widely used frequency range of electromagnetics, has not been illustrated clearly. In this paper, we described several straightforward and cost-effective methods to fabricate and characterize Ba_0.6Sr_0.4TiO₃ (BST) thin films at microwave frequencies. The prepared BST thin films here exhibit homogenous structures and great tunability ( $\eta$) in a wide frequency and temperature range when the applied field is in the out-of-plane direction. The high tunability can be attributed to high concentration of polar nanoclusters. Their response to the applied direct current (DC) field was directly visualized using a novel non-destructive near-field scanning microwave microscopy (NSMM) technique. Our results have provided some intriguing insights into the application of the FE thin films for future programmable high-frequency devices and systems.