With the arrival of the era of artificial intelligence (AI) and big data, the explosive growth of data has raised higher demands on computer hardware and systems. Neuromorphic techniques inspired by biological nervous systems are expected to be one of the approaches to breaking the von Neumann bottleneck. Piezotronic neuromorphic devices modulate electrical transport characteristics by piezopotential and directly associate external mechanical motion with electrical output signals in an active manner, with the capability to sense/store/process information of external stimuli. In this review, we have presented the piezotronic neuromorphic devices (which are classified into strain-gated piezotronic transistors and piezoelectric nanogenerator-gated field effect transistors based on device structure) and discussed their operating mechanisms and related manufacture techniques. Secondly, we summarized the research progress of piezotronic neuromorphic devices in recent years and provided a detailed discussion on multifunctional applications, including bionic sensing, information storage, logic computing, and electrical/optical artificial synapses. Finally, in the context of future development, challenges, and perspectives, we have discussed how to modulate novel neuromorphic devices with piezotronic effects more effectively. It is believed that the piezotronic neuromorphic devices have great potential for the next generation of interactive sensation/memory/computation to facilitate the development of the Internet of Things, AI, biomedical engineering, etc.

Two-dimensional (2D) tribotronic devices have been successfully involved in electromechanical modulation for channel conductance and applied in intelligent sensing system, touch screen, and logic gates. Ambipolar transistors and corresponding complementary inverters based on one type of semiconductors are highly promising due to the facile fabrication process and readily tunable polarity. Here, we demonstrate an ambipolar tribotronic transistor of molybdenum ditelluride (MoTe₂), which shows typical ambipolar transport properties modulated by triboelectric potential. It is comprised of a MoTe₂ transistor and a lateral sliding triboelectric nanogenerator (TENG). The induced triboelectric potential by Maxwell’s displacement current (a driving force for TENG) can readily modulate the transport properties of both electrons and holes in MoTe₂ channel and effectively drive the transistor. High performance tribotronic properties have been achieved, including low cutoff current below 1 pA·μm⁻¹ and high current on/off ratio of ~ 10³ for holes and electrons dominated transports. The working mechanism on how to achieve tribotronic ambipolarity is discussed in detail. A complementary tribotronic inverter based on single flake of MoTe₂ is also demonstrated with low power consumption and high stability. This work presents an active approach to efficiently modulate semiconductor devices and logic circuits based on 2D materials through external mechanical signal, which has great potential in human–machine interaction, intelligent sensor, and other wearable devices.