Simulating ambient light adaptability and polarization sensitivity of biological vision is paramount for developing intelligent optoelectronic devices with multi-dimensional perception capabilities. However, achieving both functionalities in semiconductor devices has historically necessitated complex architectures and high-voltage operation, posing significant challenges for bionic vision systems. Here, we present a light-adaptable and polarization-sensitive bionic vision utilizing a simple yet effective strategy of semiconductor-metal contact engineering in PdSe₂ transistors. By exploiting the differential coupling strengths at diverse metal–semiconductor interfaces to modulate the dynamics of photogenerated carriers, the device achieves energy-efficient visual adaptive perception across a broad range of lighting conditions, from dim to bright, without the need for additional gate voltage. Furthermore, this transistor enables multi-dimensional perception of visual information through dynamic polarization angle changes and light intensity (dim/bright) detection, providing rich input features for intelligent recognition in complex scenarios. Capitalizing on the intrinsic anisotropy of PdSe₂ and contact engineering, we have constructed a bionic light-adaptive visual neural network capable of perceiving and recognizing images in complex lighting environments. When enhanced by a residual-generating adversarial network, the system achieves remarkable recognition accuracies of 98% and 97% under dim and bright adaptation conditions, respectively. This research offers a streamlined, versatile, and scalable approach for developing energy-efficient, highly integrated, and multi-dimensional imaging recognition capabilities in light-adaptive and polarization-sensitive bionic vision devices.

Two-dimensional (2D) layered materials have been considered promising candidates for next-generation optoelectronics. However, the performance of 2D photodetectors still has much room for improvement due to weak light absorption of planar 2D materials and lack of high-quality heterojunction preparation technology. Notably, 2D materials integrating with mature bulk semiconductors are a promising pathway to overcome this limitation and promote the practical application on optoelectronics. In this work, we present the patterned assembly of MoSe₂/pyramid Si mixed-dimensional van der Waals (vdW) heterojunction arrays for broadband photodetection and imaging. Benefited from the light trapping effect induced enhanced optical absorption and high-quality vdW heterojunction, the photodetector demonstrates a wide spectral response range from 265 to 1550 nm, large responsivity up to 0.67 A·W⁻¹, high specific detectivity of 1.84 × 10¹³ Jones, and ultrafast response time of 0.34/5.6 μs at 0 V. Moreover, the photodetector array exhibits outstanding broadband image sensing capability. This study offers a novel development route for high-performance and broadband photodetector array by MoSe₂/pyramid Si mixed-dimensional heterojunction.