For Bi4Ti3O12 (BIT) high-temperature piezoceramics, improving piezoelectric performance often comes at the expense of a reduced Curie temperature. In this study, a series of Bi4-xCexTi2.97(Cr1/3Ta2/3)0.03O12 (x = 0, 0.02, 0.04, 0.06, and 0.08) ceramics are synthesized using the solid-state reaction method, and their phase structure, microstructure, piezoelectric properties, and conduction mechanisms are systematically analyzed. By employing a B-site non-equivalent co-doping strategy and introducing Ce ions into the A-site, we achieve a synergistic enhancement of piezoelectric performance, Curie temperature, and high-temperature resistivity in BIT-based ceramics. This A/B site multi-co-doping significantly enhances electrical properties by reducing oxygen vacancy concentration. Notably, the ceramic with x = 0.04 exhibits a high piezoelectric coefficient (d33) of 37 pC N-1, excellent resistivity of 6.6 × 106 Ω·cm at 500 °C, and a high Curie temperature of 681 °C. Piezoelectric force microscopy and phase field simulation reveal that the superior piezoelectric performance arises from larger domain sizes, a stronger response to external electric fields, and a higher breakdown field strength. These findings not only position this material as a robust candidate for high-temperature applications but also provide valuable insights into the design of piezoelectric ceramics with enhanced stability and performance.
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Electrobending, an emerging phenomenon in electroactive ceramics, has recently attracted significant interest; however, existing measurement methods often confound electrotensile and electrobending strains, leading to ambiguity. This study distinguishes electrotensile and electrobending strains in K0.5Na0.5NbO3 (KNN) ceramics by examining their thickness, frequency, temperature, and directional dependency, identifying a critical thickness threshold of 600 μm for electrobending in samples of 8.5 mm diameter. This threshold establishes a clear distinction between electrotensile and electrobending within the KNN system and provides a benchmark that can be applied to other systems through similar methodologies. Additionally, new electrobending parameters have been defined to assess bending deformation, addressing recent misinterpretations of “giant strain” and advancing electrostrain research by introducing an electrobending framework.

In this study, (Cr1/3/Ta2/3) non-equivalent co-doped Bi4Ti3O12 (BIT) ceramics were prepared to solve the problem that high piezoelectric performance, high Curie temperature, and high-temperature resistivity could not be achieved simultaneously in BIT-based ceramics. A series of Bi4Ti3−x(Cr1/3Ta2/3)xO12 (x = 0–0.04) ceramics were synthesized by the solid-state reaction method. The phase structure, microstructure, piezoelectric performance, and conductive mechanism of the samples were systematically investigated. The B-site non-equivalent co-doping strategy combining high-valence Ta5+ and low-valence Cr3+ significantly enhances electrical properties due to a decrease in oxygen vacancy concentration. Bi4Ti2.97(Cr1/3Ta2/3)0.03O12 ceramics exhibit a high piezoelectric coefficient (d33 = 26 pC·N−1) and a high Curie temperature (TC = 687 ℃). Moreover, the significantly increased resistivity (ρ = 2.8×106 Ω·cm at 500 ℃) and good piezoelectric stability up to 600 ℃ are also obtained for this composition. All the results demonstrate that Cr/Ta co-doped BIT-based ceramics have great potential to be applied in high-temperature piezoelectric applications.

(Bi0.5Na0.5)TiO3 (BNT)-based lead-free piezoceramics exhibit excellent electric field-induced strain (electrostrain) properties, but often suffer from large hysteresis and poor fatigue resistance, which strongly limit their applications. Here, <00l> textured Nb5+-doped 0.8(Bi0.5Na0.5)TiO3–0.2(Bi0.5K0.5)TiO3 (0.8BNT–0.2BKT) ceramics with a high degree of texturing (~80%) were prepared by the reactive template grain growth (RTGG) method using Bi4Ti3O12 as a template. By the combination of donor doping in the B-site and the RTGG method, the electrostrain performance achieves a significant enhancement. A high electrostrain of 0.65% and a piezoelectric coefficient (