Antiferroelectric (AFE) ceramic materials with excellent temperature stability are critical for meeting ever-increasing demands for practical energy storage applications. However, how to remain high dielectric breakdown strategy at high temperature, at the same time to keep energy storage density (W_rec) with high energy storage efficiency (η) is still a major challenge. In this work, polyurethane–Cu (PU–Cu) was introduced into a (Pb_0.64Tm_0.04La_0.2)(Zr_0.55Sn_0.44Ti_0.01) (PTL2ZST) AFE thick film to enhance the energy storage performance at high temperatures. PTL2ZST dispersed in PU–Cu because PU–Cu functions by introducing carrier traps, reducing conduction and leakage currents at high temperatures. As a result, at a working temperature of 140 °C, its W_rec and η remain within the range of ±5% compared with those of pure PTL2ZST (W_rec decreases by 21.7%, η increases by 9.4% at 100 °C). Furthermore, ultrahigh W_rec of 17.01 J/cm³ with η of 80.31% in PTL2ZST–90% PU–Cu thick films at 2500 kV/cm at room temperature (RT) was obtained. Moreover, this study has outstanding filtering performance because the high degree of insulation caused by carrier traps weakens the charge carrier transport. In the rectifier circuit, the PTL2ZST–90% PU–Cu films can filter off 90% of the clutter. This study provides a feasible method to produce high-performance dielectric materials because of their high energy storage performance and heat resistance, which also broadens the field of filter application.

Giant strains in (Bi_0.5Na_0.5)TiO₃ based ceramics are usually attributed to electric field induced nonpolar to polar phase transition. Whether it is an ergodic relaxor R3c/P4mm ferroelectric (FE) to long-range ordered FE phase transformation or a reversible P4bm antiferroelectric (AFE) to FE phase transition is still unclear. Herein, lead-free (0.88-x)(Bi_0.5Na_0.5)TiO₃-0.12BaTiO₃-xNaNbO₃ ceramics exhibit a composition-modulated FE tetragonal P4mm to relaxor AFE tetragonal P4bm phase transition, in which double hysteresis loop, sprout-shaped S-E curves, near-zero quasi-static d₃₃ together with a large volume change suggest the AFE characteristics of P4bm phase. An interesting finding is that the reversibility of field-induced AFE P4bm phase to FE P4mm phase transition strongly depends on the NN content, from being completely irreversible at x = 0.01–0.02, to partially reversible at x = 0.03–0.05, and finally to completely reversible at x = 0.06–0.08. It is indicated that the variation of reversibility should be attributed to the change of relative free energy caused by decreasing the FE to AFE phase transition temperature with increasing the NN content.

Compared with antiferroelectric (AFE) orthorhombic R phases, AFE orthorhombic P phases in NaNbO₃ (NN) ceramics have been rarely investigated, particularly in the field of energy-storage capacitors. The main bottleneck is closely related to the contradiction between difficultly-achieved stable relaxor AFE P phase and easily induced P-R phase transition during modifying chemical compositions. Herein, we report a novel lead-free AFE ceramic of (1-x)NN-x(Bi_0.5K_0.5)ZrO₃ ((1-x)NN-xBKZ) with a pure AFE P phase structure, which exhibits excellent energy-storage characteristics, such as an ultrahigh recoverable energy density (W_rec) ~4.4 J/cm³ at x = 0.11, a large powder density P_D ~104 MW/cm³ and a fast discharge rate t_0.9–45 ns. The analysis of polarization-field response, Raman spectrum and transmission electron microscopy demonstrates that the giant amplification of W_rec by ≥ 177 % should be mainly ascribed to the simultaneously and effectively enhanced AFE P-phase stability and its relaxor characteristics, resulting in a diffused reversible electric field-induced AFE P-ferroelectric phase transition with concurrently increased driving electric fields. Different from most (1-x)NN-xABO₃ systems, it was found that the reduced polarizability of B-site cations dominates the enhanced AFE P-phase stability in (1-x)NN-xBKZ ceramics, but the almost unchanged tolerance factor tends to cause the AFE R phase to be induced at a relatively high x value.