Photoresponsive memristors (i.e., photomemristors) have been recently highly regarded to tackle data latency and energy consumption challenges in conventional Von Neumann architecture-based image recognition systems. However, their efficacy in recognizing low-contrast images is quite limited, and while preprocessing algorithms are usually employed to enhance these images, which naturally introduce delays that hinder real-time recognition in complex conditions. To address this challenge, here we present a self-driven polarization-sensitive ferroelectric photomemristor inspired by advanced biological systems. The proposed prototype device is engineered to extract image polarization information, enabling real-time and in-situ enhanced image recognition and classification capabilities. By combining the anisotropic optical feature of the two-dimensional material (ReSe₂) and ferroelectric polarization of single-crystalline diisopropylammonium bromide (DIPAB) thin film, tunable and self-driven polarized responsiveness with intelligence was achieved. With remarkable optoelectronic synaptic characteristics of the fabricated device, a significant enhancement was demonstrated in recognition probability—averaging an impressive 85.9% for low-contrast scenarios, in contrast to the mere 47.5% exhibited by traditional photomemristors. This holds substantial implications for the detection and recognition of subtle information in diverse scenes such as autonomous driving, medical imaging, and astronomical observation.

2H-tantalum disulfide (2H-TaS₂) is a layered metallic transition metal dichalcogenide (TMD) that has recently been studied from the perspective of new physics phenomena, including simultaneous lattice distortion and charge density modulation known as the charge density wave (CDW) phase. Here we explored the collapse of CDW states in few-layer 2H-TaS₂ induced by molecular interactions using Raman spectroscopy. Our results indicate that the CDW states disappear in few-layer 2H-TaS₂ with rhodamine 6G (R6G) adsorbed due to the charge transfer, which is reflected by the change of behaviors of lattice vibrational modes in 2H-TaS₂. We observed the 2-phonon mode that signifies the CDW formation in 2H-TaS₂, and becomes a phonon-hardened mode when R6G molecules are absorbed on its surface. R6G adsorption further induces the breakdown of the Raman polarization selection rule in 2H-TaS₂, which results in the alteration of the A_1g phonon mode polarization state of 2H-TaS₂. This study can shed light not only on the underlying mechanisms of CDW states but also on controlling the CDW states under a variety of environmental conditions.