The capability to consistently manufacture structures with sub-5 nm features has greatly accelerated scientific advancements in nanoscience and nanotechnology. However, most current methods are serial processes that are time-consuming and impractical for large-scale manufacturing at the sub-5 nm level. The challenge of achieving scalable and reproducible production of sub-5 nm structures poses a significant hurdle for both fundamental research and commercial implementations. In this review, we explore some representative sub-5 nm fabrication strategies, focusing on approaches that facilitate scalable and reproducible manufacturing. We highlight the most promising techniques such as extreme ultraviolet lithography, electron beam lithography, directed self-assembly and atomic layer lithography that hold potential breakthroughs in both research and industry, based on criteria such as resolution, scalability, reproducibility and their applicability in photonics such as surface-enhanced spectroscopies, terahertz science, and nonlinear optics, as well as in electronics such as quantum devices, molecular devices and memory devices. The evolution of scalable and reproducible sub-5 nm manufacturing methods will ultimately revolutionize next-generation devices, encompassing quantum technologies, neuromorphic computing chips, and the mass production of integrated circuits.

The integrated perception capable of detecting and monitoring varieties of activities is one of the ultimate purposes of wearable electronics and intelligent robots. Limited by the space occupation, it lacks practical feasibility to stack multiple types of single sensors on each other. Herein, a high-sensitivity dual-function capacitive sensor with proximity sensing and pressure sensing is proposed. The fringing electric field can be confined in the proximity-sensitive area by fibrous loop-patterned electrode, leading to more stolen charges when object approaching and thus a high proximity sensitivity. The high-permittivity doped structured dielectric layer reduces the compressive stiffness and enhances the rate of compression-caused increase in the equivalent relative permittivity of the dielectric layer, resulting in a larger increase in capacitance and thus a high pressure sensitivity. The electrodes and dielectric layer together compose the capacitor and act as the sensor without taking up additional space. The decoupling of proximity-sensing and pressure-sensing modes can be achieved by decrease or increase in capacitance. Combined with array distribution and sequential scanning, the sensors can be used for detection of motion trajectory, contour recognition, and pressure distribution.