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Open Access Research Article Issue
High temperature piezoelectric properties and ultra-high temperature sensing properties of bismuth tungstate
Journal of Advanced Ceramics 2024, 13(12): 1931-1942
Published: 28 December 2024
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In energy generation, aerospace, and other related industries, high-temperature acceleration sensing is an essential tool for diagnostic testing, troubleshooting, and quality control. Currently, commercial acceleration sensors have a maximum operating temperature of no more than 550 °C. The study of high-temperature piezoelectric ceramics is important for increasing the operating temperature of sensors. In this work, high-temperature Bi2MoxW1−xO6 (BW) piezoelectric ceramics were prepared, and an all-mechanical center compression high-temperature acceleration sensor was designed and fabricated. The results show that when the doping ratio is x = 0.001, the ceramic sample has the best performance: the relative density of 92%, the piezoelectric coefficient (d33) of 15 pC·N−1, the quality factor (Qm) of 1642, the dielectric constant (ε) of 307 (1 kHz), and the dielectric loss (tanδ) of 0.33 (1 kHz). With increasing B-doped Mo6+ content, the Curie temperatures of the ceramics are 975, 966, 961, and 967 °C, and the high-temperature annealing temperatures are 975, 975, 950, and 950 °C, respectively. According to tests of temperature performance, the developed BW high-temperature sensor has a good linear response and sensitivity. At room temperature, a BW high-temperature piezoelectric sensor can be used stably within 1 kHz, and the average sensitivity is 3.259 pC·g−1. At 800 °C, this device can be used in the frequency range of 0.1–1.1 kHz, and the average sensitivity is 3.305 pC·g−1; the linearity is greater than 0.99, and the sensitivity deviation is 1.4%.

Open Access Research Article Issue
Solid-phase sintering and vapor–liquid–solid growth of BP@MgO quantum dot crystals with a high piezoelectric response
Journal of Advanced Ceramics 2022, 11(11): 1725-1734
Published: 19 October 2022
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Downloads:81

Low-dimensional piezoelectric and quantum piezotronics are two important branches of low-dimensional materials, playing a significant role in the advancement of low-dimensional devices, circuits, and systems. Here, we firstly propose a solid-phase sintering and vapor–liquid–solid growth (SS–VLS-like) method of preparing a quantum-sized oxide material, i.e., black phosphorus (BP)@MgO quantum dot (QD) crystal with a strong piezoelectric response. Quantum-sized MgO was obtained by Mg slowly released from MgB2 within the confinement of a nanoflake BP matrix. Since the slow release of Mg only grows nanometer-sized MgO to hinder the further growth of MgO, we added a heterostructure matrix constraint: nanoflake BP. With the BP as the matrix confinement, MgO QDs embedded in the BP@MgO QD crystals were formed. These crystals have a layered two-dimensional (2D) structure with a thickness of 11 nm and are stable in the air. In addition, piezoresponse force microscopy (PFM) images show that they have extremely strong polarity. The strong polarity can also be proved by polarization reversal and a simple pressure sensor.

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