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Recent Progress and Applications of HfO2-Based Ferroelectric Memory
Tsinghua Science and Technology 2023, 28 (2): 221-229
Published: 29 September 2022
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The discovery of ferroelectricity in hafnium oxide (HfO2) based thin films in 2011 renewed the interest in ferroelectrics. These new ferroelectrics possess completely different crystal morphology with conventional perovskite ferroelectrics, and present more robust ferroelectric properties upon aggressive scaling and compatibility with standard integrated circuit fabrication processes. In this article, we give a brief introduction to the conventional ferroelectric memories, then review the basic properties, recent progress, and memory applications of these HfO2-based ferroelectrics.

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