The atomristor (monolayer two-dimensional (2D)-material memristor) is competitive in high-speed logic computing due to its binary feature, lower energy consumption, faster switch response, and so on. Yet to date, all-atomristor logic gates used for logic computing have not been reported due to the poor consistency of different atomristors in performance. Here, by studying band structures and electron transport properties of MoS₂ atomristor, a comprehensive memristive mechanism is obtained. Guided by the simulation results, monolayer MoS₂ with moderated defect concentration has been fabricated in the experiment, which can build atomristors with high performance and good consistency. Based on this, for the first time, MoS₂ all-atomristor logic gates are realized successfully. As a demonstration, a half-adder based on the logic gates and a binary neural network (BNN) based on crossbar arrays are evaluated, indicating the applicability in various logic computing circumstances. Owing to shorter transition time and lower energy consumption, all-atomristor logic gates will open many new opportunities for next-generation logic computing and data processing.