Perovskite materials have emerged as highly promising frontier materials for a wide range of optoelectronic applications, including solar cells, light-emitting diodes (LEDs), lasers, and photodetectors (PDs). Taking perovskite-based solar cells (PSCs) as a representative example, these devices demonstrate significant advantages over traditional silicon-based solar cells, such as low costs, high power conversion efficiency (PCE), and exceptional light absorption capabilities. However, residual strain inherent to the fabrication process unavoidably degrades the device performance and consistency. This review comprehensively presents the latest developments in strain regulation techniques at the nanoscale in perovskite materials, first elucidating the concept of residual strain and its intricate relationship with various physicochemical properties. The discussion then delves into the underlying mechanisms of residual strain regulation at the nanoscale. This review discusses specific engineering strategies for residual strain regulation in perovskite-based optoelectronic devices, including solar cells, LEDs, lasers, and PDs. By systematically examining the definition, mechanisms, and methodologies of strain regulation in nanoscale perovskite materials, the review provides a comprehensive framework for understanding its critical role in device performance. Furthermore, this review also identifies and clarifies the key challenges hindering the advancement of high-performance perovskite-based devices, laying a solid foundation for future research directions in this rapidly evolving field.

The atomristor (monolayer two-dimensional (2D)-material memristor) is competitive in high-speed logic computing due to its binary feature, lower energy consumption, faster switch response, and so on. Yet to date, all-atomristor logic gates used for logic computing have not been reported due to the poor consistency of different atomristors in performance. Here, by studying band structures and electron transport properties of MoS₂ atomristor, a comprehensive memristive mechanism is obtained. Guided by the simulation results, monolayer MoS₂ with moderated defect concentration has been fabricated in the experiment, which can build atomristors with high performance and good consistency. Based on this, for the first time, MoS₂ all-atomristor logic gates are realized successfully. As a demonstration, a half-adder based on the logic gates and a binary neural network (BNN) based on crossbar arrays are evaluated, indicating the applicability in various logic computing circumstances. Owing to shorter transition time and lower energy consumption, all-atomristor logic gates will open many new opportunities for next-generation logic computing and data processing.