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Open Access Research Article Just Accepted
Heat dissipation of carbon shell in ZrC–SiC/TaC coating to improve protective ability against ultrahigh temperature ablation
Journal of Advanced Ceramics
Available online: 04 June 2024
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To efficiently decrease the ablation heat accumulation and improve the ablation protective ability of ZrC-SiC/TaC coating on carbon/carbon composites, a thermally conductive nano-network with ceramic@carbon core-shell structure was designed and constructed. Polymer-derived SiC/TaC with graphene carbon shell was synthesized and introduced into ZrC coating by supersonic atmospheric plasma spraying. Graphene shell paths were benefitted in increasing the heat transfer capability by lowering the surface temperature of about 200 °C during oxyacetylene ablation. The heat dissipation of the graphene shell in ZrC-SiC/TaC@C coating reduced the volatilization of low-melting-point phases and delayed the sintering of ZrO2 particles. Thus, the graphene shell in ZrC-SiC/TaC@C coating decreased the mass and linear ablation rates by 91.4 % and 93.7 % compared to ZrC-SiC/TaC coating, respectively. This work provided a constructive idea to improve the ablation resistance of the coatings by incorporating carbon nanomaterials with a function of heat dissipation.

Open Access Research Article Issue
Microstructure evolution and growth mechanism of core–shell silicon-based nanowires by thermal evaporation of SiO
Journal of Advanced Ceramics 2022, 11 (9): 1417-1430
Published: 18 August 2022
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Core–shell structured SiC@SiO2 nanowires and Si@SiO2 nanowires were prepared on the surface of carbon/carbon (C/C) composites by a thermal evaporation method using SiO powders as the silicon source and Ni(NO3)2 as the catalyst. The average diameters of SiC@SiO2 nanowires and Si@SiO2 nanowires are about 145 nm, and the core–shell diameter ratios are about 0.41 and 0.53, respectively. The SiO2 shells of such two nanowires resulted from the reaction between SiO and CO and the reaction of SiO itself, respectively, based on the model analysis. The growth of these two nanowires conformed to the vapor–liquid–solid (VLS) mode. In this mode, CO played an important role in the growth of nanowires. There existed a critical partial pressure of CO (pC) determining the microstructure evolution of nanowires into whether SiC@SiO2 or Si@SiO2. The value of pC was calculated to be 4.01×10−15 Pa from the thermodynamic computation. Once the CO partial pressure in the system was greater than the pC, SiO tended to react with CO, causing the formation of SiC@SiO2 nanowires. However, the decomposition of SiO played a predominant role and the products mainly consisted of Si@SiO2 nanowires. This work may be helpful for the regulation of the growth process and the understanding of the growth mechanism of silicon-based nanowires.

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