Digital light processing (DLP) printing of PbZrTiO₃ (PZT) ceramics is significantly hampered by the inherent high light absorption of the powder, leading to detrimental defects such as shrinkage and cracking, which severely compromise the final sensor performance. Herein, we propose a strategy to modulate the light absorption of PZT powder by mixing compositions calcined at different temperatures. By optimizing the mass ratio of P860 to P1150 to 1:9, we achieved a suspension with enhanced curing depth and rheological properties, enabling the fabrication of high-density ceramics with a piezoelectric constant of 470 pC/N. Furthermore, a sophisticated sandwiched piezoelectric sensor, architected with crossed square columns, demonstrated exceptional electromechanical performance, generating an open-circuit voltage of 278 V and a short-circuit current of 2.19 μA. This design conferred a piezoelectric sensitivity approximately 7 times greater than bulk counterparts. Remarkably, despite its compact size of merely 1.3 cm × 1.3 cm, this sensor still achieves a transmission power of 5.2 mW during underwater remote energy transfer over a distance of 400 mm. This work establishes a viable pathway for fabricating next-generation high-performance PZT piezoelectric sensors via advanced DLP processing.

Dense microwave dielectric ceramics of Ce₂[Zr_1-x(Al_1/2Ta_1/2)_x]₃(MoO₄)₉ (CZMAT) (x = 0.02-0.10) were prepared by the conventional solid-state route. The effects of (Al_1/2Ta_1/2)⁴⁺ on their microstructures, sintering behaviors, and microwave dielectric properties were systematically investigated. On the basis of the X-ray diffraction (XRD) results, all the samples were matched well with Pr₂Zr₃(MoO₄)₉ structures, which belonged to the space group $R\overline{3}c.$ The lattice parameters were obtained using the Rietveld refinement method. The correlations between the chemical bond parameters and microwave dielectric properties were calculated and analyzed by using the Phillips-Van Vechten-Levine (P-V-L) theory. Excellent dielectric properties of Ce₂[Zr_0.94(Al_1/2Ta_1/2)_0.06]₃(MoO₄)₉ with a relative permittivity (ɛ_r) of 10.46, quality factor (Q × f ) of 83,796 GHz, and temperature coefficient of resonant frequency (τ_f) of -11.50 ppm/℃ were achieved at 850 ℃.