The “Talent Program for Middle School Students” is an important way for the country the bottleneck in the selection of top talents, to promote the effective connection between middle school education and university education, and to achieve the large-scale cultivation of reserve talents for basic research. Based on the practical experience of reforming the cultivation of secondary school students in the physics discipline of Central South University (CSU), this paper explores the new mode of enhancing the scientific research and innovation of secondary school students by starting from the main body of cultivation, cultivation program, and cultivation effectiveness in view of the inadequacy of the cultivation mode of the students, and recommends the experience of reforming the program westward to the Xinjiang University. At the same time, a study was conducted on the interface between the “Talent Program for Middle School Students” and the “Strong Foundation Program” to provide reference for the through-training of innovative and outstanding secondary school students.

Wide bandgap semiconductors are ideal materials for ultraviolet (UV) photodetectors due to their stable optoelectronic properties and high efficient UV light absorption. However, photodetectors based on pure wide bandgap semiconductors typically have large dark current that inhibit the devices from generating high UV photoresponse. Herein, a high-voltage-resistant wafer-scale 4H-SiC UV photodetector enabled by electric field distribution modulation is proposed. As the P+ region introduced by the ion implantation process affects the electric field distribution and suppresses the Schottky barrier lowering effect, the dark current of the device reaches pA-level, and remains nA-level at a bias voltage of 1 kV. Meanwhile, the device exhibits superior photoresponse, including a prominent responsivity of 105.7 A/W, a remarkable detectivity of 1.01 × 10¹⁴ Jones, an outstanding photoconductive gain of 477, and a high light on/off ratio of 1.84 × 10⁵. This device provides a reliable solution for high-performance UV photodetectors that require high-voltage-resistant in special areas, and the wafer-scale fabrication process makes it feasible for practical applications.

Pressure exerts a profound influence on atomic configurations and interlayer interactions, thereby modulating the electronic and structural properties of materials. While high pressure has been observed to induce a structural phase transition in bulk PdSe₂ crystals, leading to a transition from semiconductor to metal, the high-pressure behavior of few-layer PdSe₂ remains elusive. Here, employing diamond anvil cell (DAC) techniques and high-pressure Raman spectroscopy, we investigate the structural evolution of layer-dependent PdSe₂ under high pressure. We reveal that pressure significantly enhances interlayer coupling in PdSe₂, driving structural phase transitions from an orthorhombic to a cubic phase. We demonstrate that PdSe₂ crystals exhibit distinct layer-dependent pressure thresholds during the phase transition, with the decrease of transition pressure as the thickness of PdSe₂ increases. Furthermore, our results of polarized Raman spectra confirm a reduction in material anisotropy with increasing pressure. This study offers crucial insights into the structural evolution of layer-dependent van der Waals materials under pressure, advancing our understanding of their pressure-induced behaviors.

Neuromorphic computing systems, which mimic the operation of neurons and synapses in the human brain, are seen as an appealing next-generation computing method due to their strong and efficient computing abilities. Two-dimensional (2D) materials with dangling bond-free surfaces and atomic-level thicknesses have emerged as promising candidates for neuromorphic computing hardware. As a result, 2D neuromorphic devices may provide an ideal platform for developing multifunctional neuromorphic applications. Here, we review the recent neuromorphic devices based on 2D material and their multifunctional applications. The synthesis and next micro–nano fabrication methods of 2D materials and their heterostructures are first introduced. The recent advances of neuromorphic 2D devices are discussed in detail using different operating principles. More importantly, we present a review of emerging multifunctional neuromorphic applications, including neuromorphic visual, auditory, tactile, and nociceptive systems based on 2D devices. In the end, we discuss the problems and methods for 2D neuromorphic device developments in the future. This paper will give insights into designing 2D neuromorphic devices and applying them to the future neuromorphic systems.

Featured with high thermal decomposition temperature and layered structure, violet phosphorus (VP) offers an unparalleled stable allotrope of phosphorus to demonstrate the optoelectronic device and photonics elements with high performance at the nanoscale. Here, we report few-layer and hundreds of nanometer-sized VP with robust stability in different solvents and ambient conditions by ultrasound-assisted liquid phase exfoliation approach. For the first time, the ultrafast carrier dynamics and third-order nonlinear optical response of VP were investigated. Sub-picosecond timescale ultrafast carrier dynamic and ultrafast nonlinear saturable absorption of VP were demonstrated. Our findings demonstrated that VP possessed a promising potential for use in ultrafast nonlinear photonic applications such as saturable absorbers and optical switches.

An emerging subclass of transition-metal dichalcogenides (TMDs), noble-transition-metal dichalcogenides (NMDs), has led to an increase in nanoscientific research in two-dimensional (2D) materials. NMDs feature a unique structure and several useful properties. 2D NMDs are promising candidates for a broad range of applications in areas such as photodetectors, phototransistors, saturable absorbers, and meta optics. In this review, the state of the art of 2D NMDs research, their structures, properties, synthesis, and potential applications are discussed, and a perspective of expected future developments is provided.