The chiral crystal structure and strong spin‐orbit coupling of tellurium (Te) make it an appealing platform for exploring unconventional radial spin textures, which can be probed via bilinear magnetoelectric resistance (BMR). Recent studies have consistently reported a pronounced BMR in Te nanosheets under in‐plane current and out‐of‐plane magnetic field, suggesting complex coexisting mechanisms. Here, to clarify this discrepancy, a systematic investigation on the second‐harmonic longitudinal resistance (R_||^2ω) is performed in the circular disc device made of single‐crystalline Te nanosheets. The R_||^2ω is found to be prominent under out‐of‐plane magnetic fields, in agreement with previous observations. Notably, the out‐of‐plane BMR reverses sign on opposite sides of the current path, which cannot be explained by spin texture considerations. Instead, the out‐of‐plane BMR is attributed to the Joule‐heating‐induced Nernst effect, as further supported by COMSOL thermal‐distribution simulations. These results reveal the crucial role of thermoelectric effects in modulating BMR in chiral crystals, offering new insight into the long‐standing discrepancy between experimental observations and theoretical predictions.

Elastic strain has been an important method to regulate the electronic structures and physical properties of nanoscale semiconductors due to the promising potentials in improving the performance of their optoelectronic devices. Here, we report the investigation of bending strain effects on the optical and optoelectric properties of individual gallium nitride (GaN) nanowires (NWs). By charactering the near-band emission spectrum of individual GaN NWs at different bending strains with low temperature cathodoluminescence (CL), we reveal that the near-band emission splits into two peaks, where the low energy peak displays a linear redshift with increasing the bending strain while the high energy one shows a slight blueshift. Further localized ultraviolet (UV) photoresponse measurements illustrate that the photoresponse of the GaN NWs shows a linear increase with the bending train, and the maximum enhancement is more than two orders of magnitude. The experimental observations are well interpreted by theoretical calculations on the strain modulation on the electronic band structure of GaN combined with analysis of carrier dynamics and optical waveguide effect in the bending strain field. Our results not only shed light on the bending strain effects on the optical and optoelectric properties of semiconductors, but also hold potential to help the future design of high performance nano-optoelectric devices.