The commercialization of self-emissive quantum dot light-emitting diode (QLED) faces several critical challenges. A primary obstacle is the reliance on acid-induced positive aging protocols using UV-curable resin to enhance device efficiency and brightness. However, this in-situ aging process is difficult to control, which undermines device fabrication reliability such as causing non-uniform luminance, accelerating degradation and introducing batch-to-batch variations, thereby impeding industrial scalability. Herein, we propose a solution-processed thermal treatment strategy to modify ZnMgO as electron transport layers in QLEDs. Characterization reveals that thermal treatment of ZnMgO leads to a 25% decrease in oxygen vacancies, which reduces the requirement for the positive aging process. Furthermore, the approximately 30% increase in nanoparticle size of thermally treated ZnMgO improves structural stability. Consequently, the resulting QLEDs exhibit enhanced electroluminescence uniformity, achieve a high luminance exceeding 60,000 cd/m² at 3 V, and triple their operational lifetime (T₉₅@1000 cd/m²) to approximately 20,000 h. The proposed thermal engineering protocol for ZnMgO provides a viable route toward reliable industrial-scale production of high-performance QLED displays.

Nano vacuum channel transistors (NVCTs) are increasingly recognized as a promising class of devices for high-frequency, radiation-hardened, and beyond-complementary metal-oxide-semiconductor (CMOS) electronics, yet their progress has been constrained by the low emission current, high turn-on voltage, and limited manufacturability. Here, we reported the first integration of halide perovskite single crystals (MAPbBr₃, MA stands for methylammonium) as the electron emitter in NVCTs, achieving performance levels incomparable to those using other cathode materials. Remarkably, even with a large vacuum channel length of ~ 230 nm, the devices delivered drain currents up to 1.26 mA and operated at a remarkably low turn-on voltage of 8 V in air, highlighting their exceptional emission capability. The perovskite-assisted NVCTs exhibited a robust gate modulation with negligible leakage and pronounced photo-responsivity, enabling potential electrical–optical joint control. Importantly, the devices were fabricated on display glass substrates using thin-film transistor-liquid crystal display (TFT-LCD) manufacturing processes, offering a pathway toward low-cost, scalable, and integrable nano-vacuum electronics. This work established perovskite single crystals as a new material platform for manufacturable, multifunctional vacuum electronics with relevance to the next-generation information and communication technologies.

High resolution and wide color gamut are two key requirements for novel display technologies. Owing to the distinguishing advantages over conventional displays, such as intrinsic wide color gamut and the possibility to achieve high resolution, quantum dot light- emitting diodes (QLED) have drawn considerable attention in recent years. On the other hand, indium phosphide quantum dots (InP QDs) have shown a great potential as a replacement for cadmium selenide (CdSe) QDs in display applications due to the inherent toxicity of cadmium-based QDs. In this study, we investigate a top-emission InP-based green QLED with optimized angular distribution. By adjusting the electrical and optical architecture, the device exhibits improved properties with a maximum current efficiency of 30.1 cd/A and a narrowed full width at half maxima (FWHM)of 31 nm, which are the best results ever reported to our knowledge.

Displays play an extremely important role in modern information society, which creates a never-ending demand for the new and better products and technologies. The latest requirements for novel display technologies focus on high resolution and high color gamut. Among emerging technologies that include organic light-emitting diode (OLED), micro light-emitting diode (micro-LED), quantum dot light-emitting diode (QLED), laser display, holographic display and others, QLED is promising owing to its intrinsic high color gamut and the possibility to achieve high resolution with photolithography approach. However, previously demonstrated photolithography techniques suffer from reduced device performance and color impurities in subpixels from the process. In this study, we demonstrated a sacrificial layer assisted patterning (SLAP) approach, which can be applied in conjunction with photolithography to fabricate high-resolution, full-color quantum dot (QD) patterns. In this approach, the negative photoresist (PR) and sacrificial layer (SL) were utilized to determine the pixels for QD deposition, while at the same time the SL helps protect the QD layer and keep it intact (named PR-SL approach). To prove this method’s viability for QLED display manufacture, a 500-ppi, full-color passive matrix (PM)-QLED prototype was fabricated via this process. Results show that there were no color impurities in the subpixels, and the PM-QLED has a high color gamut of 114% National Television Standards Committee (NTSC). To the best of our knowledge, this is the first full-color QLED prototype with such a high resolution. We anticipate that this innovative patterning technique will open a new horizon for future display technologies and may lead to a disruptive and innovative change in display industry.