Two-dimensional (2D) semiconductor devices hold great promise in specialized operating regimes including radio-frequency, high-temperature, and cryogenic conditions – yet their potential for power handling has received little emphasis, so far. Here we report a molybdenum disulphide (MoS₂) device design that strategically selects the channel width (W) and length (L) to distribute current density and mitigate self-heating, enabling operation at a source-drain bias V_ds of 10 V and a drain current I_ds of 0.1 A, while maintaining an on/off ratio of 10⁵. This corresponds to sustained dissipation P = I_dsV_ds~1 W, and highlights a pathway for watt-level switching in van der Waals electronics. We demonstrate a sensor circuit that uses our watt-level MoS₂ transistors to function as a step-down converter and a switching device. Further, a proof-of-concept on flexible substrates is presented. Our findings mark a step change in 2D power electronics, paving the way for higher-voltage devices compatible with flexible substrates and, ultimately, wearable and conformal power systems.

Although many emerging new phenomena have been unraveled in two dimensional (2D) materials with long-range spin orderings, the usually low critical temperature in van der Waals (vdW) magnetic material has thus far hindered the related practical applications. Here, we show that ferromagnetism can hold above 300 K in a metallic phase of 1T-CrTe₂ down to the ultra-thin limit. It thus makes CrTe₂ so far the only known exfoliated ultra-thin vdW magnets with intrinsic long-range magnetic ordering above room temperature. An in-plane room-temperature negative anisotropic magnetoresistance (AMR) was obtained in ultra-thin CrTe₂ devices, with a sign change in the AMR at lower temperature, with -0.6% and +5% at 300 and 10 K, respectively. Our findings provide insights into magnetism in ultra-thin CrTe₂, expanding the vdW crystals toolbox for future room-temperature spintronic applications.