To improve neuromorphic computing performance, neuromorphic system components should mimic the behaviors of organic systems. In this study, a synaptic a-Si:H/a-Ga₂O₃ phototransistor featuring all-optical and -electrical emulation is fabricated in a manner advantageous for complementary metal-oxide-semiconductor process integration. The phototransistor exhibits excitatory and inhibitory synaptic behaviors under stimulation by both optical and electrical signals. It mimics several essential synaptic functions, including excitatory postsynaptic current, inhibitory postsynaptic current, short-term memory, long-term memory, paired-pulse facilitation, and spike-timing-dependent plasticity. The optical and electrical modulation mechanisms are confirmed to arise from the a-Si:H/a-Ga₂O₃ heterojunction structure and interface effects, and the device is shown to operate at low power in both optical and electrical modes. The all-optical weight modulation function is applied to the wavelength-differential behavior response of zebrafish, successfully mimicking the color perception process of the organism. Finally, to verify the translation of the optoelectrical-derived synaptic behaviors of the phototransistor into artificial neuromorphic computation, handwritten digit image recognition of the Modified National Institute of Standards and Technology dataset is performed by a convolutional neural network, with a demonstrated average learning accuracy of 98.46%. These findings verify the applicability of the synaptic a-Si:H/a-Ga₂O₃ phototransistor in neuromorphic computing.

Fiber-shaped dye-sensitized solar cells (FDSSCs) represent promising futuristic flexible or wearable power sources, owing to their simple fabrication process, light weight, weavability, and wearability. Along with strategies on changing the properties of semiconductor materials, the effects of incorporating silver-embedded SiO₂ nanoparticles (Ag@SiO₂ NPs) on the photoanodes of solid-state FDSSCs (SS-FDSSCs) are investigated. The power conversion efficiency (PCE) of SS-FDSSCs with Ag@SiO₂ NPs reaches 5.38%, which is comparable to the reference (3.98%). The PCEs remain at 95% between -16.9 and 91.7 °C, indicating the operational stability of SS-FDSSCs within this temperature range. The fabricated SS-FDSSCs, whose radii were 2 mm, maintains more than 90% of their efficiency over 500 bending cycles and 10 washing cycles.