Because of the coupling between semiconducting and piezoelectric properties in wurtzite materials, strain-induced piezo-charges can tune the charge transport across the interface or junction, which is referred to as the piezotronic effect. For devices whose dimension is much smaller than the mean free path of carriers (such as a single atomic layer of MoS₂), ballistic transport occurs. In this study, transport in the monolayer MoS₂ piezotronic transistor is studied by presenting analytical solutions for two-dimensional (2D) MoS₂. Furthermore, a numerical simulation for guiding future 2D piezotronic nanodevice design is presented.