Solid-state nanopores with controllable pore size and morphology have huge application potential. However, it has been very challenging to process sub-10 nm silicon nanopore arrays with high efficiency and high quality at low cost. In this study, a method combining metal-assisted chemical etching and machine learning is proposed to fabricate sub-10 nm nanopore arrays on silicon wafers with various dopant types and concentrations. Through a SVM algorithm, the relationship between the nanopore structures and the fabrication conditions, including the etching solution, etching time, dopant type, and concentration, was modeled and experimentally verified. Based on this, a processing parameter window for generating regular nanopore arrays on silicon wafers with variable doping types and concentrations was obtained. The proposed machine-learning-assisted etching method will provide a feasible and economical way to process high-quality silicon nanopores, nanostructures, and devices.

Developing metal-free and long lifetime room-temperature phosphorescence (RTP) materials has received tremendous interest due to their numerous potential applications, of which stable triplet-excited state is the core challenge. Here, boron carbon oxynitride (BCNO) dots, emitting stable blue fluorescence and green RTP, are reported for the first time. The obtained BCNO dots exhibit an unexpected ultralong RTP lifetime of 1.57 s, lasting over 8 s to naked eyes. The effective doping of carbon and oxygen elements in boron nitride (BN) actually provides a small energy gap between singlet and triplet states, facilitating the intersystem crossing (ISC) and populating of triplet excitons. The formation of compact cores via crystallization and effective inter-/intra-dot hydrogen bonds further stabilizes the excited triplet states and reduces quenching of RTP by oxygen at room temperature. Based on the water-soluble feature of BCNO dots, a novel advanced security ink is developed toward anti-counterfeiting tag and confidential information encryption. This study extends BCNO dots to rarely exploited phosphorescence fields and also provides a facile strategy to prepare ultralong lifetime metal-free RTP materials.

Weak ion diffusion and electron transport due to limited interlayer spacing and poor electrical conductivity have been identified as critical roadbacks for fast and abundant energy storage of both MoS₂-based lithium ion batteries (LIBs) and sodium ion batteries (SIBs). In this work, MoS₂ porous-hollow nanorods (MoS₂/m-C800) have been designed and synthesized via an annealing-followed chemistry-intercalated strategy to solve the two issues. They are uniformly assembled from ultrathin MoS₂ nanosheets, deviated to the rod-axis direction, with expanded interlayer spacing due to alternate intercalation of N-doped carbon monolayers between the adjacent MoS₂ monolayers. Electrochemical studies of the MoS₂/m-C800 sample, as an anode of LIBs, demonstrate that the superstructure can deliver a reversible discharge capacity of 1, 170 mAh·g^-1 after 100 cycles at 0.2 A·g^-1 and maintain a reversible capacity of 951 mAh·g^-1 at 1.25 A·g^-1 after 350 cycles. While for SIBs, the superstructure also delivers a reversible discharge capacity of 350 mAh·g^-1 at 0.5 A·g^-1 after 500 cycles and exhibits superior rate capacity of 238 mAh·g^-1 at 15 A·g^-1.The excellent electrochemical performance is closely related with the hierarchical superstructures, including expanded interlayer spacing, alternate intercalation of carbon monolayers and mesoporous feature, which effectively reduce ion diffusion barrier, shorten ion diffusion paths and improve electrical conductivity.