Inorganic perovskite CsPbBr₃ quantum dots (QDs) are potential nanoscale photosensitizers; moreover, two-dimensional (2-D) molybdenum disulfide (MoS₂) has been intensively studied for application in the active layers of optoelectronic devices. In this study, heterostructures of 2D-monolayered MoS₂ with zero-dimensional functionalized CsPbBr₃ QDs were prepared, and their nanoscale optical characteristics were investigated. The effect of n-type doping on the MoS₂ monolayer after hybridization with perovskite CsPbBr₃ QDs was observed using laser confocal microscope photoluminescence (PL) and Raman spectra. Field-effect transistors (FETs) using MoS₂ and the MoS₂–CsPbBr₃ QDs hybrid were also fabricated, and their electrical and photoresponsive characteristics were investigated in terms of the charge transfer effect. For the MoS₂–CsPbBr₃ QDs-based FETs, the field effect mobility and photoresponsivity upon light irradiation were enhanced by ~ 4 times and a dramatic ~ 17 times, respectively, compared to the FET prepared without the perovskite QDs and without light irradiation. It is noteworthy that the photoresponsivity of the MoS₂–CsPbBr₃ QDs-based FETs significantly increased with increasing light power, which is completely contrary to the behavior observed in previous studies of MoS₂-based FETs. The increased mobility and significant enhancement of the photoresponsivity can be attributed to the n-type doping effect and efficient energy transfer from CsPbBr₃ QDs to MoS₂. The results indicate that the optoelectronic characteristics of MoS₂-based FETs can be significantly improved through hybridization with photosensitive perovskite CsPbBr₃ QDs.

Multilayer MoS₂ is a promising active material for sensing, energy harvesting, and optoelectronic devices owing to its intriguing tunable electronic band structure. However, its optoelectronic applications have been limited due to its indirect band gap nature. In this study, we fabricated a new type of phototransistor using multilayer MoS₂ crystal hybridized with p-type organic semiconducting rubrene patches. Owing to the outstanding photophysical properties of rubrene, the device characteristics such as charge mobility and photoresponsivity were considerably enhanced to an extent depending on the thickness of the rubrene patches. The enhanced photoresponsive conductance was analyzed in terms of the charge transfer doping effect, validated by the results of the nanoscale laser confocal microscope photoluminescence (PL) and time-resolved PL measurements.