The oxygen evolution reaction (OER) electrocatalysts, which can keep active for a long time in acidic media, are of great significance to proton exchange membrane water electrolyzers. Here, Ru-Co₃O₄ electrocatalysts with transition metal oxide Co₃O₄ as matrix and the noble metal Ru as doping element have been prepared through an ion exchange–pyrolysis process mediated by metal-organic framework, in which Ru atoms occupy the octahedral sites of Co₃O₄. Experimental and theoretical studies show that introduced Ru atoms have a passivation effect on lattice oxygen. The strong coupling between Ru and O causes a negative shift in the energy position of the O p-band centers. Therefore, the bonding activity of oxygen in the adsorbed state to the lattice oxygen is greatly passivated during the OER process, thus improving the stability of matrix material. In addition, benefiting from the modulating effect of the introduced Ru atoms on the metal active sites, the thermodynamic and kinetic barriers have been significantly reduced, which greatly enhances both the catalytic stability and reaction efficiency of Co₃O₄.

Under the complex external reaction conditions, uncovering the true structural evolution of the catalyst is of profound significance for the establishment of relevant structure–activity relationships and the rational design of electrocatalysts. Here, the surface reconstruction of the catalyst was characterized by ex-situ methods and in-situ Raman spectroscopy in CO₂ electroreduction. The final results showed that the Bi₂O₃ nanoparticles were transformed into Bi/Bi₂O₃ two-dimensional thin-layer nanosheets (NSs). It is considered to be the active phase in the electrocatalytic process. The Bi/Bi₂O₃ NSs showed good catalytic performance with a Faraday efficiency (FE) of 94.8% for formate and a current density of 26 mA cm⁻² at −1.01 V. While the catalyst maintained a 90% FE in a wide potential range (−0.91 V to −1.21 V) and long-term stability (24 h). Theoretical calculations support the theory that the excellent performance originates from the enhanced bonding state of surface Bi-Bi, which stabilized the adsorption of the key intermediate OCHO* and thus promoted the production of formate.

In recent years, two-dimensional (2D) layered metal dichalcogenides (MDCs) have received enormous attention on account of their excellent optoelectronic properties. Especially, various MDCs can be constructed into vertical/lateral heterostructures with many novel optical and electrical properties, exhibiting great potential for the application in photodetectors. Therefore, the batch production of 2D MDCs and their heterostructures is crucial for the practical application. Recently, the vapour phase methods have been proved to be dependable for growing large-scale MDCs and related heterostructures with high quality. In this paper, we summarize the latest progress about the synthesis of 2D MDCs and their heterostructures by vapour phase methods. Particular focus is paid to the control of influence factors during the vapour phase growth process. Furthermore, the application of MDCs and their heterostructures in photodetectors with outstanding performance is also outlined. Finally, the challenges and prospects for the future application are presented.

In this paper, we report a method to change the threshold voltage of SnO₂ and In₂O₃ nanowire transistors by Ga⁺ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO₂ and In₂O₃ nanowire field-effect transistors (FETs) shift in the negative gate voltage direction after Ga⁺ ion irradiation. Smaller threshold voltages, achieved by Ga⁺ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga⁺ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to ~10⁶. The results indicate that Ga⁺ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.