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Band alignment and interlayer hybridization in monolayer organic/ WSe2 heterojunction
Nano Research 2022, 15 (2): 1276-1281
Published: 09 July 2021
Downloads:35

Semiconducting heterojunctions (HJs), comprised of atomically thin transition metal dichalcogenides (TMDs), have shown great potentials in electronic and optoelectronic applications. Organic/TMD hybrid bilayers hold enhanced pumping efficiency of interfacial excitons, tunable electronic structures and optical properties, and other superior advantages to these inorganic HJs. Here, we report a direct probe of the interfacial electronic structures of a crystalline monolayer (ML) perylene-3, 4, 9, 10-tetracarboxylic-dianhydride (PTCDA)/ML-WSe2 HJ using scanning tunneling microscopy, photoluminescence, and first-principle calculations. Strong PTCDA/WSe2 interfacial interactions lead to appreciable hybridization of the WSe2 conduction band with PTCDA unoccupied states, accompanying with a significant amount of PTCDA-to-WSe2 charge transfer (by 0.06 e/PTCDA). A type-Ⅱ band alignment was directly determined with a valence band offset of ~ 1.69 eV, and an apparent conduction band offset of ~ 1.57 eV. Moreover, we found that the local stacking geometry at the HJ interface differentiates the hybridized interfacial states.

Research Article Issue
Shallowing interfacial carrier trap in transition metal dichalcogenide heterostructures with interlayer hybridization
Nano Research 2021, 14 (5): 1390-1396
Published: 03 December 2020
Downloads:29

With the unique properties, layered transition metal dichalcogenide (TMD) and its heterostructures exhibit great potential for applications in electronics. The electrical performance, e.g., contact barrier and resistance to electrodes, of TMD heterostructure devices can be significantly tailored by employing the functional layers, called interlayer engineering. At the interface between different TMD layers, the dangling-bond states normally exist and act as traps against charge carrier flow. In this study, we propose a technique to suppress such carrier trap that uses enhanced interlayer hybridization to saturate dangling-bond states, as demonstrated in a strongly interlayer-coupled monolayer-bilayer PtSe2 heterostructure. The hybridization between the unsaturated states and the interlayer electronic states of PtSe2 significantly reduces the depth of carrier traps at the interface, as corroborated by our scanning tunnelling spectroscopic measurements and density functional theory calculations. The suppressed interfacial trap demonstrates that interlayer saturation may offer an efficient way to relay the charge flow at the interface of TMD heterostructures. Thus, this technique provides an effective way for optimizing the interface contact, the crucial issue exists in two-dimensional electronic community.

Research Article Issue
A topologically substituted boron nitride hybrid aerogel for highly selective CO2 uptake
Nano Research 2018, 11 (12): 6325-6335
Published: 22 August 2018
Downloads:22

A topologically mediated synthesis of porous boron nitride aerogel has been experimentally and theoretically investigated for carbon dioxide (CO2) uptake. Replacement of the carbon atoms in a precursor aerogel of graphene oxide and carbon nanotubes was achieved using an elemental substitution reaction, to obtain a boron and nitrogen framework. The newly prepared BN aerogel possessed a specific surface area of 716.56 m2/g and exhibited an unprecedented twentyfold increase in CO2 uptake over N2, adsorbing 100 cc/g at 273 K and 80 cc/g in ambient conditions, as verified by adsorption isotherms via the multipoint Brunauer-Emmett-Teller (BET) method. Density functional theory calculations were performed to give hints on the mechanism of such high selectivity of CO2 over N2 adsorption in BN aerogel, which may be due to the interaction between the intrinsic polar nature of B-N bonds and the high quadrupole moment of CO2 over N2.

Research Article Issue
Deriving phosphorus atomic chains from few-layer black phosphorus
Nano Research 2017, 10 (7): 2519-2526
Published: 03 April 2017
Downloads:10

Phosphorus atomic chains, the narrowest nanostructures of black phosphorus (BP), are highly relevant to the in-depth development of BP-based one-dimensional (1D) nano-electronics components. In this study, we report a top-down route for the preparation of phosphorus atomic chains via electron beam sculpturing inside a transmission electron microscope (TEM). The growth and dynamics (i.e., rupture and edge migration) of 1D phosphorus chains are experimentally captured for the first time. Furthermore, the dynamic behavior and associated energetics of the as-formed phosphorus chains are further investigated by density functional theory (DFT) calculations. It is hoped that these 1D BP structures will serve as a novel platform and inspire further exploration of the versatile properties of BP.

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