Resistive Random Access Memory (ReRAM)-based neural network accelerators have potential to surpass their digital counterparts in computational efficiency and performance. However, design of these accelerators faces a number of challenges including imperfections of the ReRAM device and a large amount of calculations required to accurately simulate the former. We present XB-SIM
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Open Access
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Tsinghua Science and Technology 2021, 26 (3): 322-334
Published: 12 October 2020
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