Nano Research

ISSN 1998-0124 e-ISSN 1998-0000 CN 11-5974/O4
Editors-in-Chief: Yadong Li, Shoushan Fan
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Keyword: resistive memory switching
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Research Article
Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses
Asif Ali, Haider Abbas, Muhammad Hussain, [...], Syed Hassan Abbas Jaffery, Sajjad Hussain, Changhwan Choi, Jongwan Jung << Fewer
https://doi.org/10.1007/s12274-021-3793-1
Published: 27 September 2021
2022, 15 (3): 2263-2277
Downloads: 53 | Views: 752 | PDF (18.9 MB)
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