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Research Article | Open Access

Unveiling the invisible: Polarization-sensitive ferroelectric photomemristors for enhanced image recognition

Chenxu Sheng Shuwen Shen Laigui Hu ( )Xiaofei YueShoaib AwanDacheng Xia Jiao Wang Zhi-Jun Qiu Chunxiao Cong ( )Ran Liu ( )
School of Information Science and Technology, Fudan University, Shanghai 200433, China
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Abstract

Photoresponsive memristors (i.e., photomemristors) have been recently highly regarded to tackle data latency and energy consumption challenges in conventional Von Neumann architecture-based image recognition systems. However, their efficacy in recognizing low-contrast images is quite limited, and while preprocessing algorithms are usually employed to enhance these images, which naturally introduce delays that hinder real-time recognition in complex conditions. To address this challenge, here we present a self-driven polarization-sensitive ferroelectric photomemristor inspired by advanced biological systems. The proposed prototype device is engineered to extract image polarization information, enabling real-time and in-situ enhanced image recognition and classification capabilities. By combining the anisotropic optical feature of the two-dimensional material (ReSe2) and ferroelectric polarization of single-crystalline diisopropylammonium bromide (DIPAB) thin film, tunable and self-driven polarized responsiveness with intelligence was achieved. With remarkable optoelectronic synaptic characteristics of the fabricated device, a significant enhancement was demonstrated in recognition probability—averaging an impressive 85.9% for low-contrast scenarios, in contrast to the mere 47.5% exhibited by traditional photomemristors. This holds substantial implications for the detection and recognition of subtle information in diverse scenes such as autonomous driving, medical imaging, and astronomical observation.

Graphical Abstract

Polarization-sensitive ferroelectric photomemristors, which integrate anisotropic twodimensional (2D) materials with organic ferroelectrics, enable enhanced image recognition through their unique optoelectronic coupling.

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Nano Research
Article number: 94908019

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Cite this article:
Sheng C, Shen S, Hu L, et al. Unveiling the invisible: Polarization-sensitive ferroelectric photomemristors for enhanced image recognition. Nano Research, 2026, 19(1): 94908019. https://doi.org/10.26599/NR.2025.94908019
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Received: 08 April 2025
Revised: 29 August 2025
Accepted: 29 August 2025
Published: 02 December 2025
© The Author(s) 2026. Published by Tsinghua University Press.

This is an open access article under the terms of the Creative Commons Attribution 4.0 International License (CC BY 4.0, https://creativecommons.org/licenses/by/4.0/).