High-performance self-rectifying memristor array based on Pt/HfO₂/Ta₂O_5−x/Ti structure for flexible electronics

Self-rectifying memristor (SRM) arrays hold tremendous potential in high-density data storage and energy-efficient neuromorphic computing. However, SRM arrays are mostly developed on rigid substrates and lack mechanical flexibility, limiting their applications in intelligent electronic skin, wearable technologies, etc. Here, we present a high-performance SRM array based on Pt/HfO₂/Ta₂O_5−x/Ti heterojunctions, which can be fabricated on a flexible polyimides (PI) substrate and demonstrates exceptional memristive performance under bending conditions (bending radius (R) = 1 cm, rectifying ratio > 10⁴, retention time > 10⁴ s and endurance > 10⁵ cycles). We demonstrate a 16 × 16 flexible memristor array offering noise filtering and data storage capabilities, which can be used to accurately process and store the signals transmitted by a pressure sensor array. This research represents an important advancement towards the realization of next-generation high-performance flexible electronics.